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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chang, TCSubject: search.filters.subject.Ge segregation

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    Pulsed KrF laser annealing of Mo/Si0.76Ge0.24
    (2000-06-01)
    Luo, JS
    ;
    Lin, WT
    ;
    Chang, CY
    ;
    Shih, PS
    ;
    Chang, TC
    Interfacial reactions of Mo/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of the energy density and pulse number. Vacuum annealing was also performed on some samples for comparison. For the samples annealed at a temperature of 500-700 degrees C a continuous hexagonal Mo(Si1-xGex)(2) (h-Mo(Si1-xGex)(2)) film was formed, while Ge segregation from the h-Mo(Si1-xGex)(2) film to the underlying Si0.76Ge0.24 occurred with the extent becoming more severe at higher annealing temperatures. Concurrently, amorphous structures appeared in the Si0.76Ge0.24 substrate. At 700 degrees C h-Mo(Si1-xGex)(2) transformed to tetragonal Mo(Si1-xGex)(2) (t-Mo(Si1-xGex)(2)). Multiple-pulse laser annealing could produce a continuous h-Mo(Si1-xGex)(2) film without forming amorphous structures in the Si0.76Ge0.24 substrate, however, it could not suppress Ge segregation. In the present study, no t-Mo(Si1-xGex)(2) was formed upon pulsed KrF laser annealing even at higher energy densities. (C) 2000 Elsevier Science B.V. All rights reserved.