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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chang, TCSubject: search.filters.subject.low-k

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Now showing 1 - 6 of 6
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    Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interface
    (1999-11-01)
    Liu, PT
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    Chang, TC
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    Yang, YL
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    Cheng, YF
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    Shih, FY
    The interaction between copper and low-k hydrogen silsesquioxane (HSQ) film was investigated using a Cu/HSQ/Si metal insulation semiconductor capacitor and hydrogen plasma posttreatment. Owing to serious diffusion of copper atoms in HSQ film, degradation of the dielectric properties are significant with the increase of thermal stress. By applying hydrogen plasma treatment to the HSQ film, however, the phenomena of serious Cu penetration were not observed by electrical characteristic measurements and secondary ion mass spectroscopy (SIMS) analysis even in the absence of diffusion barrier layers. Therefore, hydrogen plasma treatment can effectively block the diffusion of copper in low-k HSQ film.
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    Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)
    (2001-12-01)
    Chang, TC
    ;
    Mor, YS
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    Liu, PT
    ;
    Tsai, TM
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    Chen, CW
    Wet stripper is commonly used to remove photoresist in IC integration processing. However, the high alkalinity of the wet stripper solution often leads to the hydrolysis of hydrogen silsesquioxane (HSQ) film and induces water uptake. As a result, both the leakage current and dielectric constant of HSQ increase. In this study, NH3 plasma treatment was applied to the HSQ film to form a thin nitrogen-containing layer on the HSQ surface and prevents the hydrolysis of HSQ during photoresist stripping. Dielectric degradation can be prevented by NH3 plasma treatment.
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    The novel pattern method of low-k hybrid-organic-siloxane-polymer film using X-ray exposure
    (2002-12-02)
    Chang, TC
    ;
    Tsai, TM
    ;
    Liu, PT
    ;
    Mor, YS
    ;
    Chen, CW
    An organic low dielectric constant (low-k) material, hybrid-organic-siloxane-polymer. (HOSP), is integrated into multilevel interconnection using X-ray exposure technology. In conventional IC integration processes, photoresist (PR) stripping with O-2 plasma and wet chemical stripper is an inevitable step. However, dielectric degradation often occurs when low-k dielectrics undergo the PR stripping process. This limits the application of incorporating low-k material into semiconductor fabrication. In order to overcome the integration issue, a novel pattern method, X-ray direct patterning is proposed. In this technology, the dielectric regions illuminated by X-ray will be cross-linked, forming the desired patterns. At the same time, the regions without X-ray illumination are dissolvable in a solvent of HOSP film. Direct-patterning processes have several advantages: (1) they do not need PR to define patterns; thereby the damage from PR stripping can be eliminated, (2) the complex etching on low-k dielectrics can be eliminated, (3) the process steps are simplified. In this work, we will investigate the dielectric properties of HOSP film with X-ray curing for the first time. Additionally, a scanning electron microscope image of circle pattern was made to verify the process practicability. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Investigation of the electrical properties and reliability of amorphous SiCN
    (2004-01-30)
    Chen, CW
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    Chang, TC
    ;
    Liu, PT
    ;
    Tsai, TM
    ;
    Huang, HC
    Amorphous SiCN (a-SiCN) is a candidate for barrier dielectric and has lower dielectric constant (ksimilar to5) relative to the commonly used barrier SiN (ksimilar to7). In this study, we investigate the leaky behavior and barrier characteristics of a-SiCN (k: 4similar to5) doped with different nitrogen concentration. The leaky behavior of a-SiCN is Poole-Frenkel at high electric field. This is similar to SiN. Thermal stability of a-SiCN films is good enough to meet the prescription in back-end-of-line fabrication process. The bias-temperature stress (BTS) test has been conducted on a-SiCN to investigate the barrier ability against copper 15/16penetration. We find that a-SiCN could sustain the stress of electric field up to 4 mV/cm at 150 degreesC. In addition, a-SiCN films with higher nitrogen concentration exhibit better barrier property against copper penetration. The SIMS spectra also have been used to monitor the distributions of copper after different BTS conditions, confirming our inference on leakage mechanism. (C) 2003 Elsevier Science B.V. All rights reserved.
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    Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications
    (2004-01-30)
    Chang, TC
    ;
    Yan, ST
    ;
    Liu, R
    ;
    Lin, ZW
    ;
    Aoki, H
    In this paper, electrical characterization of low-k dielectric methyl-silsesquiazane (MSZ) is presented. Thermal stress and bias temperature stress (BTS) were utilized to evaluate the impact of Cu penetration on dielectric properties. In the investigation of thermal stress performed by furnace annealing, the leakage mechanism of Al- and Cu-gate MIS capacitors is competed by the decrease of the interfacial states between metal and dielectric and the increase of defects resulted from Cu penetration. Also, the leakage conduction mechanism at high electric field is deduced from Schottky emission in conjunction with space-charge-limited current conduction (SCLC) through BTS methods. (C) 2003 Elsevier B.V. All rights reserved.
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    Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs
    (2006-03-01)
    Chang, TS
    ;
    Chang, TC
    ;
    Liu, PT
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    Chang, TS
    ;
    Yeh, FS
    In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k similar to 7), the HSQ passivation layer (k similar to 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs). (c) 2005 Published by Elsevier B.V.