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學術出版;;Publications

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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, TFHas files: No

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    Resist-related damage on ultrathin gate oxide during plasma ashing
    (1997-02-01)
    Chien, CH
    ;
    Chang, CY
    ;
    Lin, HC
    ;
    Chang, TF
    ;
    Chiou, SG
    This paper presents an important observation of plasma-induced damage on ultrathin oxides during O-2 plasma ashing by metal ''antenna'' structures with photoresist on top of the electrodes, It is found that for MOS capacitors without overlying photoresist during plasma ashing, only minor damage occurs on thin oxides, even for oxide thickness down to 4.2 nm and an area ratio as large as 10(4), In contrast, oxides thinner than 6 nm with resist overlayer suffer significant degradation from plasma charging, This phenomenon is contrary to most previous reports, It suggests that the presence of photoresist will substantially affect the plasma charging during ashing process, especially for devices with ultrathin gate oxides.
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    The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing
    (1997-05-01)
    Chien, CH
    ;
    Chang, CY
    ;
    Lin, HC
    ;
    Chiou, SG
    ;
    Huang, TY
    During ashing process, resist has been intuitively regarded as a protection layer and deliberately removed in previous studies by wet process prior to plasma exposure in an effort to amplify the damage effect, Recently, we found instead that resist does not simply act as a protection layer, This newly observed phenomenon cannot be explained by the well-known electron shading effect which should not affect the area-intensive antenna structure used in our study, In this letter, we hypothesize that this resist-related charging damage is determined by the plasma potential adjustment difference between those devices with and without resist overlayer, The experimental results show a good correlation with our explanation, To be specific, severe antenna area ratio (ARR) dependent degradation of thin gate oxide is induced during the initial ashing stage while the resist is still on the electrodes, not during the overashing period.
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    Can emotional design change people's attitude on the web site?
    (2005)
    Chang, TF
    ;
    傳播研究所
    ;
    Institute of Communication Studies
    In the past decades most HCl studies in web sites focused on cognitive aspects, their primary concern has been about; how to help users work more efficiently with computers. However, as Dillon argued people. must agree that much of what we do as humans is., driven by emotional and affective factors. There are, many studies providing evidence that emotion scan affect people's judgment. Since the interface design is clearly known, it will dominate a user's evaluation at first glance and influence the user's decision making while surfing on the web site. Emotional factor. certainly should be considered as an important,cue: when designing a web site. This research will discuss the relationship between emotion and a user's attitude and how does emotion induce certain attitude on a web site.