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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, Ting-ChangStart date: 2020

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Now showing 1 - 10 of 15
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    Total-Dose Effect of X-ray Irradiation on Low-TemperaturePolycrystalline Silicon Thin-Film Transistors (vol 41, pg 864, 2020)
    (2020-09-01)
    Tai, Ya-Hsiang
    ;
    Yeh, Shan
    ;
    Huang, Shih-Hsuan
    ;
    Chang, Ting-Chang
    ;
    電機學院
    In The above article [1], the Acknowledgment was deleted in error. Therefore, the Acknowledgment is added below. This change had no influence on the discussion and conclusions in the article.
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    Interface Defect Shielding of Electron Trapping in a-InGaZnO Thin Film Transistors
    (2020-09-01)
    Lin, Chih-Chih
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    Tai, Mao-Chou
    ;
    Chang, Ting-Chang
    ;
    Tsao, Yu-Ching
    ;
    Wang, Yu-Xuan
    In this work, an abnormal lowering of subthreshold swing (SS) after self-heating stress in a device with thick channel is observed. A model of interface defect shielding is proposed, based on electron trapping at the channel/gate insulator interface. The phenomenon is discussed systematically through the band diagram and extractions of the field effective mobility. Results suggest that a depletion region appears after electron trapping at the front channel, which then prevents the carriers from reaching the interface defects. Therefore, an abnormal superior electrical performance after stress is observed. Finally, a dual gate amorphous InGaZnO (a-IGZO) thin film transistor (TFT) is used to clarify the phenomenon. Results from different top gate bias voltage confirms the bulk accumulation and better gate control.
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    Abnormal hysteresis formation in hump region after positive gate bias stress in low-temperature poly-silicon thin film transistors
    (2020-09-30)
    Tu, Hong-Yi
    ;
    Chang, Ting-Chang
    ;
    Tsao, Yu-Ching
    ;
    Tai, Mao-Chou
    ;
    Tsai, Yu-Lin
    Degradation in low-temperature polycrystalline-silicon thin-film transistors after electrical stress was thoroughly investigated in this work. Main channel degradation, abnormal hump generation and hysteresis appearing in the hump region can be observed after positive bias stress. Furthermore, the difference in subthreshold swing (SS) values between forward/reverse sweep is observed. The electron trapping into the gate insulator (GI) dominates the main degradation and the hump generation. Additionally, the difference in SS values which appears in the hump region is attributed to the interface traps and the hysteresis is caused by electron trapping/detrapping into GI.
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    Effect of ELA Energy Density on Self-Heating Stress in Low-Temperature Polycrystalline Silicon Thin-Film Transistors
    (2020-08-01)
    Huang, Shin-Ping
    ;
    Chen, Hong-Chih
    ;
    Chen, Po-Hsun
    ;
    Zheng, Yu-Zhe
    ;
    Chu, Ann-Kuo
    The extent of the poly-silicon crystalline protrusion, a result of differences in excimer laser annealing (ELA), affects the performance and reliability of thin-film transistors (TFTs). This study investigates the degradation mechanism of the low-temperature polycrystalline silicon (LTPS) TFT devices with differences in crystalline protrusion under self-heating stress (SHS). Higher ELA energy will induce higher protrusion height in the interface between the poly-silicon and gate insulator (GI). This surface morphology leads to serious charge trapping into the GI layers; in contrast, the smallest degradation after SHS can be seen in the devices with the lowest protrusion height. This indicates that the degradation is caused by the surface morphology between the poly-Si and GI interface. In addition, the COMSOL simulation results confirm that the large electric field in the GI layer appears in the rough surface morphology devices; therefore, choosing the appropriate ELA energy of the poly-Si is beneficial for the applications of the driving TFT in organic light-emitting diode (OLED) display in the manufacturing industry.
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    Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
    (2020-09-23)
    Lin, Shih-Kai
    ;
    Wu, Cheng-Hsien
    ;
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Lien, Chen-Hsin
    This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d(sw)) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.
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    Total-Dose Effect of X-ray Irradiation on Low-Temperature Polycrystalline Silicon Thin-Film Transistors
    (2020-06-01)
    Tai, Ya-Hsiang
    ;
    Yeh, Shan
    ;
    Huang, Shih-Hsuan
    ;
    Chang, Ting-Chang
    ;
    電機學院
    In this paper, the total-dose effect of X-ray irradiation on low-temperature polycrystalline-silicon (LTPS) thin film transistors (TFTs) is studied. Experiments under different conditions, including fixed intensity, fixed time, fixed total dose, short shot with different frequencies and high/low intensity for short/long time were performed and analyzed. With an increase of the irradiation dose, the threshold voltage (Vth) shifts negatively, the subthreshold swing (S.S.) degrades and the field effect mobility decreases owing to positive trapped charges and interface traps. All magnitude of negative shifts of (Vth), (S. S.) and field effect mobility for LTPS TFTs are well correlated to the total accumulated dose. The results are consistent with (Vth) shift due to trapped holes and the interface traps for mobility.
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    A Novel Structure to Reduce Degradation Under Mechanical Bending in Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
    (2020-05-01)
    Wang, Yu-Xuan
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    Chang, Ting-Chang
    ;
    Huang, Shin-Ping
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    Tai, Mao-Chou
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    Zheng, Yu-Zhe
    In this study, a novel structural device, named as a wing-shaped TFT, is proposed and is demonstrated to prevent fast deterioration under mechanical bending in foldable devices. After long-term mechanical bending, standard low-temperature polysilicon TFTs exhibit instability behaviors such as sub-channel formation, serious threshold voltage shifts, an on-current (I-ON) increase, and an off-current (I-OFF) decrease. These phenomena are believed to be due to additional oxide traps along the channel-width edges of the gate insulator after bending. In order to suppress this degradation, a wing-shaped structure is proposed. By extending the active layer, degradation regions are shifted away from the main channel. Therefore, the reliability of the devices is enhanced. The transfer characteristics show enhanced electrical behavior after being held for 48 hours in a static bent condition, with an 88% drop in threshold voltage shift as well as a 55% decrease in subthreshold swing degradation, proving better durability of the foldable TFT to bending stress for devices with these wings. Time-dependent transfer characteristics, a COMSOL simulation, and device geometry are discussed to support our findings.
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    Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs
    (2020-05-01)
    Zheng, Yu-Zhe
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    Huang, Shin-Ping
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    Chen, Po-Hsun
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    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000'WC) compression at R = 2mm. Due to the low Young's modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation.
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    High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator
    (2020-03-01)
    Chen, Jia
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    Pan, Wen-Qian
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    Li, Yi
    ;
    Kuang, Rui
    ;
    He, Yu-Hui
    Memristor emerges as the key enabler for neural network accelerator. Here, we demonstrate high-precision symmetric weight update in a one transistor one resistor (1T1R) structure Ti/HfO2/TiN memristor using a gate voltage ramping method, with over 120-level states and low variation (< 4%). Incorporating all experimental non-idealities, the proposed mixed hardware-software convolutional neural network demonstrates over 92.79% online learning accuracy (against software equivalent 98.45%) for MNIST recognition task. The network also shows robustness to input image noises, array yield, and retention issues.
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    Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing
    (2020-03-01)
    Wu, Pei-Yu
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    Zheng, Hao-Xuan
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    Shih, Chih-Cheng
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    Chang, Ting-Chang
    ;
    Chen, Wei-Jang
    In this experiment, the electrical performance of zinc oxide based-resistive random access memory (RRAM) is successfully improved by using annealing in ammonia hydroxide solution at low-temperature and high pressure to complete ammonium-doped ZnO based-RRAM. The results of material analysis indicate that using CO2 as ammonia hydroxide carrier during the annealing process leads to the reduction in dangling bond density. This can be clearly observed in the decrease in breakdown voltage during the forming process and a lower operating current during operation. Furthermore, in this ammonium-doped ZnO based-RRAM, we study the molecular doping of NH3 in ZnO, where the endurance and retention properties are improved as well. These improvements can be attributed to the higher concentration of nitrogen in the switching layer, which can effectively control the active oxygen ions during the operation process.