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Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
(2016-02-01)
Chen, Kai-Huang
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Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Liang, Shu-Ping
Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode
(2016-04-27)
Chen, Kai-Huang
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Chang, Kuan-Chang
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Chang, Ting-Chang
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Tsai, Tsung-Ming
;
Liang, Shu-Ping
To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (lambda = 400 nm) and red-light (lambda = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.
Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambient
(2010-10-01)
Hu, Chih-Wei
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Chang, Ting-Chang
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Tu, Chun-Hao
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Chiang, Cheng-Neng
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Lin, Chao-Cheng
In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N-2 and O-2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N-2 ambient has smaller memory window and better retention characteristics than in O-2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory. (C) 2010 Elsevier B.V. All rights reserved.
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
(2011-09-01)
Huang, Sheng-Yao
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Chang, Ting-Chang
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Chen, Min-Chen
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Chen, Shih-Ching
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Lo, Hung-Ping
This study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 10(4) cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85 degrees C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trapcontrolled space charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. (C) 2011 Elsevier Ltd. All rights reserved.
Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments
(2011-12-15)
Chang, Yao-Feng
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Feng, Li-Wei
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Chang, Ting-Chang
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We investigated annealing effects on the bipolar resistive switching characteristics and mechanism of the thin FeOx transition layer in a Ti/TiN/SiO2/FeOx/FePt structure by depositing a plasma-enhanced tetraethyl orthosilicate oxide onto the Fe-contented electrode. The electrical results show that the values of operation voltage, variation of electrical parameters and retention properties could be improved with the increasing thermal treatment budget. Tunneling electron microscope, X-ray diffraction, Auger electron spectroscopy and X-ray photon-emission spectra depth profiles were examined for cross-section image, crystallinity and composition analyses of the transition layer. In order to investigate the resistive switching mechanism and characterizations in Ti/TiN/SiO2/FeOx/FePt structure, the electrical parameters were extracted during set and reset process. The retention property at room temperature and 85 C was improved after the thermal treatment and maintains both resistance states over 6 x 10(4) s implies promising potential for future memory application. (C) 2011 Elsevier B.V. All rights reserved.
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
(2013-07-01)
Syu, Yong-En
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Zhang, Rui
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Chang, Ting-Chang
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Tsai, Tsung-Ming
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Chang, Kuan-Chang
Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
(2013-04-01)
Chang, Kuan-Chang
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Tsai, Tsung-Ming
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Chang, Ting-Chang
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Wu, Hsing-Hua
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Chen, Kai-Huang
To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.
Bipolar resistive switching of chromium oxide for resistive random access memory
(2011-08-01)
Chen, Shih-Cheng
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Chang, Ting-Chang
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Chen, Shih-Yang
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Chen, Chi-Wen
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Chen, Shih-Ching
This study investigates the resistance switching characteristics of Cr(2)O(3)-based resistance random access memory (RRAM) with Pt/Cr(2)O(3)/TiN and Pt/Cr(2)O(3)/Pt structures. Only devices with Pt/Cr(2)O(3)/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr(2)O(3) and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr(2)O(3)/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10(2), on top of that, the retention properties of both states are very stable after 10(4) s with a voltage of -0.2 V. (C) 2010 Elsevier Ltd. All rights reserved.
The resistive switching characteristics in TaON films for nonvolatile memory applications
(2013-01-15)
Chen, Min-Chen
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Chang, Ting-Chang
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Chiu, Yi-Chieh
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Chen, Shih-Cheng
;
Huang, Sheng-Yao
In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.
Asymmetric Carrier Conduction Mechanism by Tip Electric Field in WSiOX Resistance Switching Device
(2012-03-01)
Syu, Yong-En
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Chang, Ting-Chang
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Tsai, Tsung-Ming
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Chang, Geng-Wei
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Chang, Kuan-Chang
Resistance random access memory (RRAM) is a great potential candidate for next-generation nonvolatile memory due to the outstanding memory characteristic. However, the resistance switching mechanism is still a riddle nowadays. In this letter, the switching mechanism is investigated by current-voltage (I-V) curve fitting in the TiN/WSiOX/Pt RRAM device. The asymmetric phenomenon of the carrier conduction behavior is explained at the high-resistance state in high electric field. The switching behavior is regarded to tip electric field by localizing the filament between the interface of top electrode and insulator.

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