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Author: search.filters.author.Chang, Ting-ChangSubject: search.filters.subject.Resistive switching

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Now showing 1 - 4 of 4
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    A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
    (2020-03-15)
    Lin, Chih-Yang
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    Chang, Ting-Chang
    ;
    Pan, Chih-Hung
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    Chen, Min-Chen
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    Xu, You-Lin
    A technique was proposed to concentrate the distribution of set voltages. After a plasma treatment, the stability of the high-resistive state (HRS) increased, and the distribution of set voltages was more concentrated at 0.8 V, with a sufficient HRS/LRS resistive ratio (similar to 100x). In addition, the surface of the TiN electrode became rougher, causing oxygen to enter the TiN electrode and form a TiON layer, which acts as an oxygen reservoir. The reservoir is confirmed and the conduction model is supported by both electrical and material analyses. We propose that the observed improvement is due to the difference in the TiN electrode surface. (C) 2019 Published by Elsevier B.V.
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    Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
    (2016-02-01)
    Chen, Kai-Huang
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    Chang, Kuan-Chang
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    Chang, Ting-Chang
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    Tsai, Tsung-Ming
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    Liang, Shu-Ping
    Bipolar switching resistance behaviors of the Gd:SiO2 resistive random access memory (RRAM) devices on indium tin oxide electrode by the low-temperature supercritical CO2-treated technology were investigated. For physical and electrical measurement results obtained, the improvement on oxygen qualities, properties of indium tin oxide electrode, and operation current of the Gd:SiO2 RRAM devices were also observed. In addition, the initial metallic filament-forming model analyses and conduction transferred mechanism in switching resistance properties of the RRAM devices were verified and explained. Finally, the electrical reliability and retention properties of the Gd:SiO2 RRAM devices for low-resistance state (LRS)/high-resistance state (HRS) in different switching cycles were also measured for applications in nonvolatile random memory devices.
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    Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments
    (2011-12-15)
    Chang, Yao-Feng
    ;
    Feng, Li-Wei
    ;
    Chang, Ting-Chang
    ;
    電子工程學系及電子研究所
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    Department of Electronics Engineering and Institute of Electronics
    We investigated annealing effects on the bipolar resistive switching characteristics and mechanism of the thin FeOx transition layer in a Ti/TiN/SiO2/FeOx/FePt structure by depositing a plasma-enhanced tetraethyl orthosilicate oxide onto the Fe-contented electrode. The electrical results show that the values of operation voltage, variation of electrical parameters and retention properties could be improved with the increasing thermal treatment budget. Tunneling electron microscope, X-ray diffraction, Auger electron spectroscopy and X-ray photon-emission spectra depth profiles were examined for cross-section image, crystallinity and composition analyses of the transition layer. In order to investigate the resistive switching mechanism and characterizations in Ti/TiN/SiO2/FeOx/FePt structure, the electrical parameters were extracted during set and reset process. The retention property at room temperature and 85 C was improved after the thermal treatment and maintains both resistance states over 6 x 10(4) s implies promising potential for future memory application. (C) 2011 Elsevier B.V. All rights reserved.
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    The resistive switching characteristics in TaON films for nonvolatile memory applications
    (2013-01-15)
    Chen, Min-Chen
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    Chang, Ting-Chang
    ;
    Chiu, Yi-Chieh
    ;
    Chen, Shih-Cheng
    ;
    Huang, Sheng-Yao
    In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.