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Author: search.filters.author.Chang, W. H.Subject: search.filters.subject.II-VI semiconductors

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    Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys
    (2008-12-15)
    Lin, Y. C.
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    Chou, W. C.
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    Fan, W. C.
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    Ku, J. T.
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    Ke, F. K.
    Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
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    Carrier dynamics in isoelectronic ZnSe1-xOx semiconductors
    (2010-07-26)
    Lin, Y. C.
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    Chung, H. L.
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    Chou, W. C.
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    Chen, W. K.
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    Chang, W. H.
    This study explores the effects of both Oxygen and temperature on the carrier dynamics of isoelectronic ZnSe1-xOx (x=0.027 and 0.053) semiconductors using photoluminescence (PL) and time-resolved PL spectroscopy. We find that the Kohlrausch law is highly consistent with the complex decay traces induced by isoelectronic O traps, and the mechanism of carrier recombination undergoes a complicated change from trapped to free excitons with the increase in temperature. Complex recombination processes are clarified using the relaxation model based on various decay channels. These findings are consistent with the initial fall in the stretching exponent beta followed by its monotonic increase with increasing temperature. (C) 2010 American Institute of Physics. [doi:10.1063/1.3473776]