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Author: search.filters.author.Chang, W. H.Subject: search.filters.subject.Molecular beam epitaxy

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    Optical characterization of isoelectronic ZnSe1-xOx semiconductors
    (2011-05-15)
    Lin, Y. C.
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    Chung, H. L.
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    Ku, J. T.
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    Chen, C. Y.
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    Chien, K. F.
    We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in 0 concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent beta. (C) 2010 Elsevier B.V. All rights reserved.
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    Epitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaN
    (2011-05-15)
    Chang, W. H.
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    Chang, P.
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    Lee, W. C.
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    Lai, T. Y.
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    Kwo, J.
    Nanometer-thick Y2O3 films were grown epitaxially on GaN (0 0 0 1) using molecular beam epitaxy (MBE). The structures of the oxide films were studied in situ by reflection high energy electron diffraction (RHEED) during the growth and ex situ by high resolution X-ray diffraction using synchrotron radiation. At atmospheric pressure. Y2O3 exists in either cubic or hexagonal structure. For the first time, the high-pressure monoclinic phase of Y2O3, stabilized by epitaxy, was prepared and preserved under atmospheric pressure. The electrical characterization carried out on the Y2O3/GaN metal-oxide-semiconductor (MOS) capacitors showed a leakage current density of similar to 3.3 x 10(-6) A/cm(2) at 1.5 MV/cm, which remained almost the same after 800 degrees C annealing. A dielectric constant of similar to 20 and a hysteresis of similar to 250 mV were deduced from the capacitance-voltage (C-V) curves for the epitaxial monoclinic Y2O3. (C) 2010 Elsevier B.V. All rights reserved.
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    Magneto-optical properties of ZnMnTe/ZnSe quantum dots
    (2011-05-15)
    Fan, W. C.
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    Ku, J. T.
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    Chou, W. C.
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    Chen, W. K.
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    Chang, W. H.
    The sigma(+) and sigma(-) circularly polarized time-integrated and time-resolved Photoluminescence (PL) measurements were employed to investigate the carrier spin dynamics of ZnMnTe/ZnSe Quantum Dots (QDs) grown on GaAs substrates by molecular beam epitaxy. The Kohlrausch's stretching exponential function well correlates both the sigma(+) and sigma(-) decay profiles. The measured spin relaxation time is about 23 ns. (C) 2010 Elsevier B.V. All rights reserved.