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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chang, YHHas files: No

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    Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods
    (2005-10-01)
    Hsueh, TH
    ;
    Sheu, JK
    ;
    Huang, HW
    ;
    Chang, YH
    ;
    Ou-Yang, MC
    ln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl-2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
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    Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
    (2004-11-01)
    Chang, YA
    ;
    Kuo, HC
    ;
    Chang, YH
    ;
    Wang, SC
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    光電工程學系
    In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1 - xNx quantum-well (QW) lasers with various GaAs1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.
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    Formation of D- centers in GaAs/AlGaAs quantum wells
    (1998-06-01)
    Lee, CH
    ;
    Chang, YH
    ;
    Lin, HH
    ;
    Lee, CP
    ;
    電子工程學系及電子研究所
    Three different experiments were employed to study the behaviors of neutral (D-0) and negatively charged donors (D-) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D- centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results.
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    Formation of D(-) centers in GaAs/AlGaAs quantum wells
    (1998-06-01)
    Lee, CH
    ;
    Chang, YH
    ;
    Lin, HH
    ;
    Lee, CP
    ;
    電子工程學系及電子研究所
    Three different experiments were employed to study the behaviors of neutral (D(0)) and negatively charged donors (D(-)) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D(-) centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results.
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    Persistent photoconductivity in SiGe/Si quantum wells
    (1998-07-15)
    Tsai, LC
    ;
    Huang, CF
    ;
    Fan, JC
    ;
    Chang, YH
    ;
    Chen, YF
    Persistent photoconductivity (PPC) has been observed in boron-doped Si1-xGex/Si quantum wells. The decay kinetics of the PPC effect can be well described by a stretched-exponential function, I-ppc(t) = I-ppc(0)exp[-(t/tau)(beta)](0 < beta < 1), which is usually observed in many disorder materials. Through the studies of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different Ge content, we identify that the alloy potential fluctuations induced by compositional disorder are the origin of the PPC effect in Si1-xGex/Si quantum wells. (C) 1998 American Institute of Physics. [S0021-8979(98)00914-1].
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    Transport and optical studies of the D--conduction band in doped GaAs/AlGaAs quantum wells
    (2001-08-01)
    Lee, CH
    ;
    Chang, YH
    ;
    Huang, CF
    ;
    Huang, MY
    ;
    Lin, HH
    The properties of D- ions in quantum wells were studied. It is found that, with an intermediate concentration of D- ions, electrons in the quantum wells possess both band-like and impurity-like properties. The appearance of the Quantum Hall effect makes it possible to rule out the existence of an impurity band that is separated from the conduction band. The results are interpreted in terms of the formation of a D- conduction band, with the D- band becoming a tail of the conduction band. The implications of our experimental results on the metal-insulator transitions in doped semiconductors are discussed.
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    SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films.
    (2002-04-07)
    Chiu, HT
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    Chang, YH
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    Wang, LS
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    Peng, CW
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    Lee, CY
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    Self-generated NAF nano template assisted formation of porous carbon nanotube arrays.
    (2004-03-28)
    Chiu, HT
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    Huang, CH
    ;
    Chang, YH
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    Lee, CY
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    Cheng, SF