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Now showing 1 - 10 of 51

Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
(2005-01-01)
Kuo, HC
;
Chang, YA
;
Chang, YH
;
Chu, JT
;
Tsai, MY
1.27 mu m InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature raised from room temperature to 70 degrees C. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degrees C to 70 degrees C.
TiSixOy as an absorptive shifter for embedded phase-shifting mask in 248 nm and the modification of R-T method for the determination of shifter's n and k
(1998-03-01)
Loong, WA
;
Chen, CW
;
Chang, YH
;
Lin, CM
;
Cui, Z
TiSixOy as an absorptive shifter (embedded layer) for attenuated phase-shifting mask (APSM) in 248 nm wavelength is presented. TiSixOy thin film was formed by plasma sputtering of Ti (25 similar to 55 W) and Si (200 similar to 250 W) under Ar (30 seem) and oxygen (0.1 similar to 0.4 sccm). For required phase shift degree theta=180 degrees, calculated thickness d(180) of TiSixOy Film is within the range of 87 similar to 120 nm depending on its reflectivity R, transmittance T, refractive index n and extinction coefficient k. Taguchi design of experiment has been applied to study the plasma etching selectivity of TiSixOy over APSM's substrate quartz (SiO2), under Cl-2:NF3=20:30 seem; 50 W and 60 mtorr, selectivity of 10:1 similar to 35:1 was observed. Modifications of reflectivity-transmittance (R-T) method have been developed for the determination of this absorptive shifter's n and k.
A novel structural design for force/torque fingertip sensors
(1998-08-01)
Chang, YH
;
Huang, YC
;
Liu, YP
;
Tsay, SM
;
電子工程學系及電子研究所
This work presents a novel structural design of force/torque fingertip sensors for sensing planar forces. The resolution can be increased by reducing the condition number of the calibration matrix and the sensitivity can be enhanced by placing strain gauges at specified positions. Moreover, the interaction from off-axis loads is intrinsically negligible in our design. A relatively simple and accurate calibration method for performance evaluation is introduced. Some experimental results are presented to demonstrate the capability of the proposed design.
Alignment error evaluation of the dial pattern
(1998-09-01)
Chang, YH
;
Huang, YC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
To achieve smooth etched sidewall surface at minimal time expense and reduce undercut etching are basic disciplines of the task of accurate alignment. When aligning etch-masks to [110] crystal orientation on a [100] Si wafer, a consideration is proposed by Schroder who uses a dial pattern for pre-etching to determine [110] crystal orientation. But that performance depends strongly on the resolution of the mask pattern generator. In this paper, we analyse Schroder's method by mathematical modeling and computer simulation. Finally, we propose an improvement for the Schroder limitation according to our analytic results.
Reactive ion pretreatment technique to improve the ashing resistance of low dielectric constant high carbon content polymer
(2000-07-01)
Chang, KM
;
Yang, JY
;
Chang, YH
;
Tsai, JY
;
電子工程學系及電子研究所
The oxygen plasma via resist strip process causes significant damage to organic spin on polymer (Allied Signal X-720); thus its inter-level dielectric application is limited. A simple treatment technology, reactive glass stabilization (RGS), using reactive ion is proposed to reform the X-720 film surface. The reactive ion modification of the X-720 film can improve the resistance against oxygen plasma. The measurements of stress, thickness variation, scanning electron microscope (SEM) micrographs of gap filling and dielectric constant show that RGS can be practically used in the low dielectric material application with non-etch-back process. The measurements of fourier transform infrared (FTIR) spectroscopy, and auger electron spectroscopy (AES) show that RGS can effectively reform the surface of the X-720 film and increase the ashing resistance even in high carbon content spin on polymer.
Polygon building block route to sp(2)-carbon-based materials
(2001-07-18)
Lee, CY
;
Chiu, HT
;
Peng, CW
;
Yen, MY
;
Chang, YH
Pentagonal- and hexogonal-shaped building block precursors provide a novel, high-yield method for the preparation of carbon onions and nanosized graphite particles. A reaction of hexachlorocyclopentadiene (C5Cl6) with sodium (see Figure) offers carbon onions with 8-50 spherical and elliptical shells. The same reaction with hexachlorobenzene (C6Cl6) results in a mixture of graphite crystallites. [GRAPHICS]
Syntheses of nano-sized cubic phase early transition metal carbides from metal chlorides and n-butyllithiurn
(2002-08-01)
Chang, YH
;
Chin, CW
;
Chen, YC
;
Wu, CC
;
Tsai, CP
Nano-sized early transition metal carbides, including TiC, ZrC, HfC, V4C3, NbC and TaC, were synthesized from colloidal precursors generated by reducing the metal chlorides, TiCl4, ZrCl4, HfCl4, VCl3, NbCl5, and TaCl5, respectively, with n-C4H9Li in hexane. The colloids were formed from the reduction of the metal centers, which then nucleated into nano-scaled metal clusters. The major byproducts were LiCl, C4H10, and C4H8, indicating that the butyl groups probably underwent beta-hydrogen elimination and reductive elimination. This suggests that C-C bond activation of the butyl groups was in operation, leaving residual carbon atoms in the metal colloids. The colloids were further heated at 873-1273 K to crystallize into cubic phase TIC, ZrC, HfC, V4C3, NbC and TaC nanoparticles.
An investigation of bias temperature instability in hydrogenated low-temperature polycrystalline silicon thin film transistors
(2002-09-01)
Lin, CW
;
Tseng, CH
;
Chang, TK
;
Chang, YH
;
Chu, FT
The instability mechanisms of the hydrogenated n-channel low-temperature polycrystalline silicon thin film transistors under on-state stress were investigated with various bias stress conditions and device channel widths. It was found that hot carrier degradation which originated from a high drain electric field and self-heating during high current operation were the two dominant mechanisms responsible for device degradation. An electrically reversible depassivation/passivation phenomenon was also found in devices under high current stress. but not in those under hot carrier stress. It was inferred that the self-heating effect would accelerate the bond breakage and diffusion of hydrogen ions, thus enhancing the rate of depassivation/passivation. Moreover. when the Current in the hot carrier stress mode was sufficiently high. self-heating became the dominant degradation mechanism and hot carrier degradation phenomenon was also suppressed for devices with large channel width, Meanwhile, the electrically reversible depassivation/passivation phenomenon also occurred in this case.
Low-temperature synthesis of transition metal nanoparticles from metal complexes and organopolysilane oligomers
(2002-10-01)
Chang, YH
;
Wang, HW
;
Chiu, CW
;
Cheng, DS
;
Yen, MY
Mo, W, and Cu nanoparticles (5-50 nm) are synthesized from reactions employing a metal complex, such as MoO2Cl2(DME), MoCl5, WCl6, ((CuOBu)-Bu-t)(4), or CuCl2, and a organopolysilane oligomer Si(SiMe3)(4) or (SiMe2)(6) either in a hexane solution (343 K) or in a sealed tube (473-673 K). Oxo- and chlorophilicities of the silyl groups provide for an energetically favored reaction route to reduce the metal complexes. The reaction byproducts are removed easily either by evaporation or dissolution into hydrocarbon solvents. It is proposed that the homogeneous mixing of the reactants in vapor and solution phases allows the association and growth of molecules into small clusters, then into nanosized metal particles.
Nano-sizing titanium into titanium carbide by 1-chlorobutane
(2002-11-01)
Chang, YH
;
Chiu, HT
;
應用化學系
;
Department of Applied Chemistry
TiC nanoparticles (average diameter 10-150 nm) were prepared by reacting bulk Ti powders (average diameter 20 mum) with gaseous I-chlorobutane at a relatively low temperature (1073-1273 K). I-Chlorobutane provided the carbon atom in the TiC and the chlorine atom that assisted the shrinking of the size of the original Ti powders. The apparently simple procedure is a complex heterogeneous process combining etching, deposition, and carburization reactions.

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