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Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers
(2005-01-01)
Kuo, HC
;
Chang, YA
;
Chang, YH
;
Chu, JT
;
Tsai, MY
1.27 mu m InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than similar to 35% as the temperature raised from room temperature to 70 degrees C. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of similar to 5.25 GHz/(mA)(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25 degrees C to 70 degrees C.
Fabrication and characterization of In0.25Ga0.75N/GaN multiple quantum wells embedded in nanorods
(2005-10-01)
Hsueh, TH
;
Sheu, JK
;
Huang, HW
;
Chang, YH
;
Ou-Yang, MC
ln(0.25)Ga(0.75)N/GaN multiple quantum wells embedded in nanorods with diameters of 60-100nm were fabricated by inductively coupled plasma reactive ion etching with Cl-2/Ar plasma. The strong optical emission of the nanorods, observed by micro-photoluminescence measurement at 80 K, reveals a large blue shift of about 90meV and an increase in photoluminescence intensity density of more than 17-fold, compared with that of the as-grown wafer under the same excitation power density of 80W/cm(2). These nanostructures have a high potential for application in efficient GaN-based vertical cavity emitters.
Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriers
(2004-11-01)
Chang, YA
;
Kuo, HC
;
Chang, YH
;
Wang, SC
;
光電工程學系
In this article, the laser performance of the 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1 - xNx quantum-well (QW) lasers with various GaAs1 - xNx strain compensated barriers (x = 0%, 0.5%, 1%, and 2%) has been numerically investigated with a laser technology integrated simulation program. The simulation results suggest that with x = 0% and 0.5% can have better optical gain properties and high characteristic temperature coefficient To values of 110 and 94 K at the temperature range of 300-370 K. As the nitrogen composition in GaAs1 - xNx barrier increases more than 1% the laser performance degrades rapidly and the To value decreases to 87 K at temperature range of 300-340 K. This can be attributed to the decrease of conduction band carrier confinement potential between In0.4Ga0.6As0.986N0.014 QW and GaAs1 - xNx barrier and the increase of electronic leakage current. Finally, the temperature dependent electronic leakage current in the InGaAsN/GaAs1 - xNx quantum-well lasers are also investigated. (C) 2004 Elsevier B.V. All rights reserved.
Formation of D- centers in GaAs/AlGaAs quantum wells
(1998-06-01)
Lee, CH
;
Chang, YH
;
Lin, HH
;
Lee, CP
;
電子工程學系及電子研究所
Three different experiments were employed to study the behaviors of neutral (D-0) and negatively charged donors (D-) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D- centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results.
TiSixOy as an absorptive shifter for embedded phase-shifting mask in 248 nm and the modification of R-T method for the determination of shifter's n and k
(1998-03-01)
Loong, WA
;
Chen, CW
;
Chang, YH
;
Lin, CM
;
Cui, Z
TiSixOy as an absorptive shifter (embedded layer) for attenuated phase-shifting mask (APSM) in 248 nm wavelength is presented. TiSixOy thin film was formed by plasma sputtering of Ti (25 similar to 55 W) and Si (200 similar to 250 W) under Ar (30 seem) and oxygen (0.1 similar to 0.4 sccm). For required phase shift degree theta=180 degrees, calculated thickness d(180) of TiSixOy Film is within the range of 87 similar to 120 nm depending on its reflectivity R, transmittance T, refractive index n and extinction coefficient k. Taguchi design of experiment has been applied to study the plasma etching selectivity of TiSixOy over APSM's substrate quartz (SiO2), under Cl-2:NF3=20:30 seem; 50 W and 60 mtorr, selectivity of 10:1 similar to 35:1 was observed. Modifications of reflectivity-transmittance (R-T) method have been developed for the determination of this absorptive shifter's n and k.
Formation of D(-) centers in GaAs/AlGaAs quantum wells
(1998-06-01)
Lee, CH
;
Chang, YH
;
Lin, HH
;
Lee, CP
;
電子工程學系及電子研究所
Three different experiments were employed to study the behaviors of neutral (D(0)) and negatively charged donors (D(-)) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D(-) centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results.
Persistent photoconductivity in SiGe/Si quantum wells
(1998-07-15)
Tsai, LC
;
Huang, CF
;
Fan, JC
;
Chang, YH
;
Chen, YF
Persistent photoconductivity (PPC) has been observed in boron-doped Si1-xGex/Si quantum wells. The decay kinetics of the PPC effect can be well described by a stretched-exponential function, I-ppc(t) = I-ppc(0)exp[-(t/tau)(beta)](0 < beta < 1), which is usually observed in many disorder materials. Through the studies of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different Ge content, we identify that the alloy potential fluctuations induced by compositional disorder are the origin of the PPC effect in Si1-xGex/Si quantum wells. (C) 1998 American Institute of Physics. [S0021-8979(98)00914-1].
A novel structural design for force/torque fingertip sensors
(1998-08-01)
Chang, YH
;
Huang, YC
;
Liu, YP
;
Tsay, SM
;
電子工程學系及電子研究所
This work presents a novel structural design of force/torque fingertip sensors for sensing planar forces. The resolution can be increased by reducing the condition number of the calibration matrix and the sensitivity can be enhanced by placing strain gauges at specified positions. Moreover, the interaction from off-axis loads is intrinsically negligible in our design. A relatively simple and accurate calibration method for performance evaluation is introduced. Some experimental results are presented to demonstrate the capability of the proposed design.
Alignment error evaluation of the dial pattern
(1998-09-01)
Chang, YH
;
Huang, YC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
To achieve smooth etched sidewall surface at minimal time expense and reduce undercut etching are basic disciplines of the task of accurate alignment. When aligning etch-masks to [110] crystal orientation on a [100] Si wafer, a consideration is proposed by Schroder who uses a dial pattern for pre-etching to determine [110] crystal orientation. But that performance depends strongly on the resolution of the mask pattern generator. In this paper, we analyse Schroder's method by mathematical modeling and computer simulation. Finally, we propose an improvement for the Schroder limitation according to our analytic results.
Reactive ion pretreatment technique to improve the ashing resistance of low dielectric constant high carbon content polymer
(2000-07-01)
Chang, KM
;
Yang, JY
;
Chang, YH
;
Tsai, JY
;
電子工程學系及電子研究所
The oxygen plasma via resist strip process causes significant damage to organic spin on polymer (Allied Signal X-720); thus its inter-level dielectric application is limited. A simple treatment technology, reactive glass stabilization (RGS), using reactive ion is proposed to reform the X-720 film surface. The reactive ion modification of the X-720 film can improve the resistance against oxygen plasma. The measurements of stress, thickness variation, scanning electron microscope (SEM) micrographs of gap filling and dielectric constant show that RGS can be practically used in the low dielectric material application with non-etch-back process. The measurements of fourier transform infrared (FTIR) spectroscopy, and auger electron spectroscopy (AES) show that RGS can effectively reform the surface of the X-720 film and increase the ashing resistance even in high carbon content spin on polymer.

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