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Author: search.filters.author.Chang, Yuan-MingSubject: search.filters.subject.atomic layer deposition

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    Optoelectronic properties in vertically aligned ZnO/Si-nanopillars
    (2012)
    Lee, Hsin-Yi
    ;
    Chang, Yuan-Ming
    ;
    Tseng, Wen-Shou
    ;
    Kao, Pin-Hsu
    ;
    Wang, Hau-Wei
    An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (similar to 9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 mu A/cm(2) current density criterion is similar to 0.74 V/mu m with an estimated beta similar to 1.33X10(4). The low turn-on field and marked enhancement in beta were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. On the other hand, room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on Si nanowires fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200 degrees C, an intensive UV emission corresponding to free-exciton recombination was observed with a nearly complete suppression of the defect-associated broad visible range emission peak.
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    Field Emission in Vertically Aligned ZnO/Si-Nanopillars with Ultra Low Turn-On Field
    (2012-03-01)
    Chang, Yuan-Ming
    ;
    Liu, Mao-Chen
    ;
    Kao, Pin-Hsu
    ;
    Lin, Chih-Ming
    ;
    Lee, Hsin-Yi
    An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver (Ag) nanodots as natural metal-nanomask during dry etching process. The obtained Si-NPs were preferentially aligned along the c-axis direction. Ultrathin ZnO films (similar to 9 nm) were subsequently deposited on the Si-NPs by atomic layer deposition (ALD) to enhance the field emission property. The average diameter of the ZnO/Si-NPs is in the order of tens of nanometers, which enables efficient field emission and gives rise to marked improvement in the field enhancement factor, beta. The turn-on field defined by the 10 mu A/cm(2) current density criterion is similar to 0.74 V/mu m with an estimated beta approximate to 1.33x10(4). The low turn-on field and marked enhancement in beta were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs.
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    Enhanced Free Exciton and Direct Band-Edge Emissions at Room Temperature in Ultrathin ZnO Films Grown on Si Nanopillars by Atomic Layer Deposition
    (2011-11-01)
    Chang, Yuan-Ming
    ;
    Shieh, Jiann
    ;
    Chu, Pei-Yuan
    ;
    Lee, Hsin-Yi
    ;
    Lin, Chih-Ming
    Room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on silicon nanopillars (Si-NPs) fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200 degrees C, an intensive UV emission corresponding to free-exciton recombination (similar to 3.31 eV) was observed with a nearly complete suppression of the defect-associated broad visible range emission peak. On the other hand, for ZnO films grown at 25 degrees C, albeit the appearance of the defect-associated visible emission, the UV emission peak was observed to shift by similar to 60 meV to near the direct band edge (3.37 eV) recombination emission. The high-resolution transmission electron microscopy (HRTEM) showed that the ZnO films obtained at 25 degrees C were consisting of ZnO nanocrystals with a mean radius of 2 nm embedded in a largely amorphous matrix. Because the Bohr radius of free-exictons in bulk ZnO is similar to 2.3 nm, the size confinement effect may have occurred and resulted in the observed direct band edge electron-hole recombination. Additionally, the results also demonstrate order of magnitude enhancement in emission efficiency for the ZnO/Si-NP structure, as compared to that of ZnO directly deposited on Si substrate under the same conditions.