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Author: search.filters.author.Chang, Yung-HuangSubject: search.filters.subject.MoS2

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Now showing 1 - 3 of 3
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    Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
    (2014-08-01)
    Chang, Yung-Huang
    ;
    Zhang, Wenjing
    ;
    Zhu, Yihan
    ;
    Han, Yu
    ;
    Pu, Jiang
    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.
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    Item type:Item,
    Scalable Patterning of MoS2 Nanoribbons by Micromolding in Capillaries
    (2016-08-17)
    Hung, Yu-Han
    ;
    Lu, Ang-Yu
    ;
    Chang, Yung-Huang
    ;
    Huang, Jing-Kai
    ;
    Chang, Jeng-Kuei
    In this study, we report a facile approach to prepare dense arrays of MoS2 nanoribbons by combining procedures. of micromolding in capillaries (MIMIC) and thermolysis of thiosalts ((NH4)(2)MoS4) as the printing ink. The obtained MoS2 nanoribbons had a "thickness reaching as. low as 3.9 nm, a width ranging from 157 to 465 nm, and a length up to 2 cm. MoS2 nanoribbons with an extremely high aspect ratio (lengthiwidtfi) of similar to 7.4 X 10(8) were achieved. The MoS2 pattern can be printed on versatile substrates, such as SiO2/Si, sapphire, Au film, FTO/glass, and graphene-coated glass. The degree of crystallinity of the as-prepared MoS2 was discovered to be adjustable by varying the temperature through postannealing. The high-temperature thermolysis (1000 degrees C) results in high-quality conductive samples, and field-effect transistors, based on the patterned MoS2 nanoribbons were demonstrated and characterized, where the carrier mobility was comparable to that of thin-film MoS2. In contrast, the low-temperature-treated samples (170 degrees C) result in a unique nanocrystalline MOSx structure (x approximate to 2.5), where the abundant and exposed edge sites were obtained from highly dense arrays of nanoribbon structures by this MIMIC patterning method,: The patterned MoSx was revealed to have superior electrocatalytic efficiency (an overpotential of similar to 211 mV at 10 mA/cm(2) and a Tafel slope of 43 mV/dec) in the hydrogen evolution reaction (HER) when compared to the thin-film MoS2. The report introduces a new concept for rapidly fabricating cost-effective and high-density MoS2/MoSx natiostructures on versatile substrates, which may pave the way for potential applications in nanoelectronics/optoelectronics and frontier energy materials.
  • Thumbnail Image
    Item type:Item,
    Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
    (2014-08-01)
    Chang, Yung-Huang
    ;
    Zhang, Wenjing
    ;
    Zhu, Yihan
    ;
    Han, Yu
    ;
    Pu, Jiang
    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.