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Oxygen Passivation Mediated Tunability of Trion and Excitons in MoS2
(2017-08-16)
Gogoi, Pranjal Kumar
;
Hu, Zhenliang
;
Wang, Qixing
;
Carvalho, Alexandra
;
Schmidt, Daniel
Using wide spectral range in situ spectroscopic ellipsometry with systematic ultrahigh vacuum annealing and in situ exposure to oxygen, we report the complex dielectric function of MoS2 isolating the environmental effects and revealing the crucial role of unpassivated and passivated sulphur vacancies. The spectral weights of the A (1.92 eV) and B (2.02 eV) exciton peaks in the dielectric function reduce significantly upon annealing, accompanied by spectral weight transfer in a broad energy range. Interestingly, the original spectral weights are recovered upon controlled oxygen exposure. This tunability of the excitonic effects is likely due to passivation and reemergence of the gap states in the band structure during oxygen adsorption and desorption, respectively, as indicated by ab initio density functional theory calculation results. This Letter unravels and emphasizes the important role of adsorbed oxygen in the optical spectra and many-body interactions of MoS2.
Giant photoluminescence enhancement in tungsten-diselenide-gold plasmonic hybrid structures
(2016-05-01)
Wang, Zhuo
;
Dong, Zhaogang
;
Gu, Yinghong
;
Chang, Yung-Huang
;
Zhang, Lei
Impressive properties arise from the atomically thin nature of transition metal dichalcogenide two-dimensional materials. However, being atomically thin limits their optical absorption or emission. Hence, enhancing their photoluminescence by plasmonic nanostructures is critical for integrating these materials in optoelectronic and photonic devices. Typical photoluminescence enhancement from transition metal dichalcogenides is 100-fold, with recent enhancement of 1,000-fold achieved by simultaneously enhancing absorption, emission and directionality of the system. By suspending WSe2 flakes onto sub-20-nm-wide trenches in gold substrate, we report a giant photoluminescence enhancement of similar to 20,000-fold. It is attributed to an enhanced absorption of the pump laser due to the lateral gap plasmons confined in the trenches and the enhanced Purcell factor by the plasmonic nanostructure. This work demonstrates the feasibility of giant photoluminescence enhancement in WSe2 with judiciously designed plasmonic nanostructures and paves a way towards the implementation of plasmon-enhanced transition metal dichalcogenide photodetectors, sensors and emitters.
Ultrafast Initial Growth Rate of Self-Assembled TiO2 Nanorod Arrays Fabricated by Ti Anodization
(2011-01-01)
Chang, Yung-Huang
;
Lin, Hsiao-Wei
;
Chen, Chih
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The growth mechanism of TiO2 nanorods fabricated by the anodization of Ti films using a mask of anodic aluminum oxide is investigated by examining the growth rate and morphology of the fabricated nanorods. It is found that the growth rate is 250 nm/s within the first 0.1 s at 117 V and decreases abruptly to 0.79 nm/s after 3 s. In addition, the diameter of the nanorods is larger near the top than near the root of the nanorods. A growth mechanism is proposed to explain these interesting phenomena. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3496404] All rights reserved.
Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
(2014-08-01)
Chang, Yung-Huang
;
Zhang, Wenjing
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Zhu, Yihan
;
Han, Yu
;
Pu, Jiang
Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.
Growth Mechanism of Self-Assembled TixWyO Nanotubes Fabricated by TiW Alloy Anodization
(2018-01-01)
Chang, Yung-Huang
;
Chen, Yuan-Tsung
;
Huang, Chien-Sheng
;
Lu, Chia-Ling
;
Lee, Shih-Hung
Nanostructures, such as nanodots and nanorods, have been fabricated by the anodization process with an aid of anodic aluminum oxide (AAO) for several decades. However, tubular nanostructures have not been reported by using an AAO-assistant anodization technology until now. In this study, we successfully synthesized self-organized TixWyO nanotubes with cap structures for the first time by using a two-step anodization process from Al-coated TiW alloy layers. The TixWyO nanotubes were observed only in the shaped pores of AAO with large enough pore size, and otherwise the nanostructures would become solid rods due to the aggregation of TixWyO. The wall of nanotubes was similar to 30% inside the pores and the other similar to 70% penetrated into the AAO template. Furthermore, no tubular nanostructures were found unless the percentage of W element in TiW alloys is larger than 50%, attributing to the formation of a void by oxygen bubbles arising from the oxidation reaction of tungsten metal. Besides, the height of the nanotubes is limited by an electric field of 0.82 GV/m due to the dielectric breakdown effect. Finally, a bottom-up growth mechanism at the oxide/metal interface is proposed, based on the observation of the cap structure on the top of the tubular architecture. (C) The Author(s) 2018. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License.
Direct probe of heterojunction effects upon photoconductive properties of TiO2 nanotubes fabricated by atomic layer deposition
(2010-06-04)
Chang, Yung-Huang
;
Liu, Chien-Min
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Tseng, Yuan-Chieh
;
Chen, Chih
;
Chen, Chia-Chuan
This study investigated Schottky- and ohmic-contact effects upon the photoresponses of ITO/TiO2/Si and Ti/TiO2/Si nanotube-based photodiodes. The TiO2 tube arrays were fabricated by atomic layer deposition (ALD) and shaped by an anodic aluminum oxide (AAO) template on a p-type Si substrate. The contact area between the electrode (Ti or ITO) and the TiO2's tip was varied by tuning the tube's inner wall thickness with ALD, providing a direct and systematic probe of the heterojunction effects upon the photodiodes' responses. Results show that the Ti/TiO2/Si diode exhibits a highly thickness-dependent photoresponse. This is because the photocurrent is driven by the p-n junction at TiO2/Si alone and it faces no retarding at the ohmic contact of Ti/TiO2. For the ITO/TiO2/Si diode, the Schottky contact at ITO/TiO2 regulates photocurrent overriding TiO2/Si as a result of higher efficiency in photogeneration, leading to the opposite response compared with the Ti/TiO2/Si diode. Respective energy band diagrams are provided to support the statements above, and a consistent picture is obtained for both time response and quantum efficiency measurements.
Facile Fabrication of TiO2 Nanorod Arrays for Gas Sensing using Double-Layered Anodic Oxidation Method
(2012-01-01)
Lin, Hsiao-Wei
;
Chang, Yung-Huang
;
Chen, Chih
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Self-organized anodic titanium dioxide nanorod arrays were fabricated using a two-stage anodization method from superimposed Ti-Al layers deposited on quartz substrates. The morphology of nanorods could be controlled by the anodizing conditions of the aluminum (first stage) and the titanium layer (second stage). The first stage of anodization process controls the diameter and density of nanorods and the second stage of anodization controls the height of nanorods. Therefore, we could fabricate nanorod arrays with desired aspect ratio and density under specific anodizing conditions. Furthermore, we used TiO2 nanorod arrays as the field ionization anode of a gas sensor, and the morphology of nanorods has shown to have a high correlation with the working voltage of gas sensing. The TiO2 nanorods possess good selectivity and low working voltage under different atmosphere and their working electric field is lower than gas sensing using carbon nanotubes and ZnO nanowires as the anode. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.013201jes].
Band Alignment of 2D Transition Metal Dichalcogenide Heterojunctions
(2017-05-18)
Chiu, Ming-Hui
;
Tseng, Wei-Hsuan
;
Tang, Hao-Ling
;
Chang, Yung-Huang
;
Chen, Chang-Hsiao
It is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls the electronic and optical properties. However, the well-known Anderson's model usually fails to predict the band alignment in bulk HJ systems due to the presence of charge transfer at the interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since the ultrathin HJs and devices can be easily built and they are promising for future electronics. The vertical HJs based on 2D materials can be constructed via van der Waals stacking regardless of the lattice mismatch between two materials. Despite the defect-free characteristics of the junction interface, experimental evidence is still lacking on whether the simple Anderson rule can predict the band alignment of HJs. Here, the validity of Anderson's model is verified for the 2D heterojunction systems and the success of Anderson's model is attributed to the absence of dangling bonds (i.e., interface dipoles) at the van der Waal interface. The results from the work set a foundation allowing the use of powerful Anderson's rule to determine the band alignments of 2D HJs, which is beneficial to future electronic, photonic, and optoelectronic devices.
Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides
(2016-02)
Zheng, Yu Jie
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Huang, Yu Li
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Chenp, Yifeng
;
Zhao, Weijie
;
Eda, Goki
The nature and extent of electronic screening at heterointerfaces and their consequences on energy level alignment are of profound importance in numerous applications, such as solar cells, electronics etc. The increasing availability of two-dimensional (2D) transition metal dichalcogenides (TMDs) brings additional opportunities for them to be used as interlayers in "van der Waals (vdW) heterostructures" and organic/inorganic flexible devices. These innovations raise the question of the extent to which the 2D TMDs participate actively in dielectric screening at the interface. Here we study perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) monolayers adsorbed on single-layer tungsten diselenide (WSe2), bare graphite, and Au(111) surfaces, revealing a strong dependence of the PTCDA HOMO-LUMO gap on the electronic screening effects from the substrate. The monolayer WSe2 interlayer provides substantial, but not complete, screening at the organic/inorganic interface. Our results lay a foundation for the exploitation of the complex interfacial properties of hybrid systems based on TMD materials.
Scalable Patterning of MoS2 Nanoribbons by Micromolding in Capillaries
(2016-08-17)
Hung, Yu-Han
;
Lu, Ang-Yu
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Chang, Yung-Huang
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Huang, Jing-Kai
;
Chang, Jeng-Kuei
In this study, we report a facile approach to prepare dense arrays of MoS2 nanoribbons by combining procedures. of micromolding in capillaries (MIMIC) and thermolysis of thiosalts ((NH4)(2)MoS4) as the printing ink. The obtained MoS2 nanoribbons had a "thickness reaching as. low as 3.9 nm, a width ranging from 157 to 465 nm, and a length up to 2 cm. MoS2 nanoribbons with an extremely high aspect ratio (lengthiwidtfi) of similar to 7.4 X 10(8) were achieved. The MoS2 pattern can be printed on versatile substrates, such as SiO2/Si, sapphire, Au film, FTO/glass, and graphene-coated glass. The degree of crystallinity of the as-prepared MoS2 was discovered to be adjustable by varying the temperature through postannealing. The high-temperature thermolysis (1000 degrees C) results in high-quality conductive samples, and field-effect transistors, based on the patterned MoS2 nanoribbons were demonstrated and characterized, where the carrier mobility was comparable to that of thin-film MoS2. In contrast, the low-temperature-treated samples (170 degrees C) result in a unique nanocrystalline MOSx structure (x approximate to 2.5), where the abundant and exposed edge sites were obtained from highly dense arrays of nanoribbon structures by this MIMIC patterning method,: The patterned MoSx was revealed to have superior electrocatalytic efficiency (an overpotential of similar to 211 mV at 10 mA/cm(2) and a Tafel slope of 43 mV/dec) in the hydrogen evolution reaction (HER) when compared to the thin-film MoS2. The report introduces a new concept for rapidly fabricating cost-effective and high-density MoS2/MoSx natiostructures on versatile substrates, which may pave the way for potential applications in nanoelectronics/optoelectronics and frontier energy materials.

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