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Author: search.filters.author.Chao, CWSubject: search.filters.subject.amorphous silicon

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    Electroless plating with Pd induced crystallization of amorphous silicon thin films
    (2002-11-01)
    Hu, GR
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    Wu, YCS
    ;
    Chao, CW
    ;
    Huang, TJ
    ;
    材料科學與工程學系
    A metal-induced crystallization method can be used to decrease the crystallization temperature of amorphous silicon (a-Si). In this study, Pd metal was deposited by an electroless plating method. After it was annealed at 550degreesC, two kinds of needlelike grains were found. The direction of the primary grain was along <211> and the growth of the secondary grain occurred along the <011> direction.
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    Effects of oxygen on the growth of Ni induced lateral crystallization of amorphous silicon films
    (2003-06-26)
    Lin, YD
    ;
    Wu, YS
    ;
    Chao, CW
    ;
    Hu, GR
    ;
    材料科學與工程學系
    Effects of oxygen on the growth of metal (Ni) induced lateral crystallization (MILC) of amorphous silicon have been investigated. It is found that the oxygen in the annealing ambient did not degrade the MILC length or growth rate. The oxygen existence in Ni film does not degrade the MILC growth rate either. However, it retards the nucleation of poly-Si for about 4 h. This is because that NiO needed an incubation period to be reduced to nickel metal for the subsequent mediated crystallization of a-Si process. (C) 2003 Elsevier Science B.V. All rights reserved.