🏛️國立陽明交通大學機構典藏

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Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
(1998-10-01)
Lai, CS
;
Chao, TS
;
Lei, TF
;
Lee, CL
;
Huang, TY
A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
(1998-10-01)
Lai, CS
;
Chao, TS
;
Lei, TF
;
Lee, CL
;
Huang, TY
A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
(1999-12-01)
Chao, TS
;
Chang, SJ
;
Chien, CH
;
Lin, HC
;
Huang, TY
The combined effects of N-2-implantation at S/D extension and N2O oxide on 0.18 mu m n- and p-Metal oxide field effect transistors (MOSFETs) were investigated. It is found that for n-channel transistors, V-th roll-off and drain-induced barrier lowering (DIBL) are enhanced by nitrogen incorporation through either N2O oxide or N-2-implantatian. However, for p-channel transistors, apposite trends are observed for N2O oxide and N-2-implantation. Finally, nitrogen incorporation by either method is found to improve the interface quality for nMOSFETs. While for p-channel transistors, best results are obtained by the combined effects of N2O oxide and N-2-implantation.
High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment
(2001-02-01)
Pan, TM
;
Lei, TF
;
Yang, WL
;
Cheng, CM
;
Chao, TS
In this letter, a method to grow high quality interpolysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA NaO oxidation, show excellent electrical properties in terms of very high electric breakdown field, ion; leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.
Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatment
(2001-05-01)
Pan, TM
;
Lei, TF
;
Wen, HC
;
Chao, TS
;
電子工程學系及電子研究所
In this paper, we developed a new method to grow robust ultrathin oxynitride (E-OT = 18 Angstrom) film with effective dielectric constant of 7.15. By NH3-nitridation of Si substrate, grown ultrathin Si3N4 with N2O annealing shows excellent electrical properties in terms of significant lower leakage current, very low bulk trap density and trap generation rate, and high endurance in stressing, In addition, this oxynitride film exhibits relatively weak temperature dependence due to a Fowler-Nordheim (FN) tunneling mechanism. This dielectric film appears to be promising for future ultralarge scale integrated (ULSI) devices.
Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
(2003-11-01)
Chao, TS
;
Chang, TH
;
電子物理學系
;
Department of Electrophysics
This brief presents a new nitridation process on floating poly-Si gate to improve the quality of both tunneling oxide and interpoly-oxide of nonvolatile memories. Three types of poly-Si for a floating gate have been investigated. We found in-situ doped poly-Si shows the best performance in terms of breakdown field, charge-to-breakdown (Q(BD)) and trapping rate. The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.
Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxides
(2004-11-01)
Yang, WL
;
Chao, TS
;
Lai, KH
;
電子物理學系
;
Department of Electrophysics
High-performance p(+)-poly-SiGe-gate p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) have been fabricated using NH3-nitrided or N2O-grown oxide'instead of the conventional O-2-grown oxide. It is found that NH3-nitrided or N2O-grown oxide can suppress boron penetration in the p(+)-poly-SiGe gate, which improves the integrity of gate dielectrics, resulting in a low flat-band voltage shift, subthreshold swing, and drain-induced barrier lowering.

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