<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

1996 - 1999312000 - 200672

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chao, TS

Search Results

Now showing 1 - 10 of 103
  • Thumbnail Image
    Item type:Item,
    Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridation
    (2003-01-01)
    Chao, TS
    ;
    Chang, TH
    ;
    電子物理學系
    ;
    Department of Electrophysics
    In this paper, we found the nitridation on the interpoly-oxide with NH3 and N2O processes can simultaneously improve the quality of both tunneling oxide and interpoly-oxide. Three types of poly-Si for floating gate are investigated. We found in-situ doped poly -Si shows the best performance in terms of breakdown filed, charge to breakdown (Q(BD)) and trapping rate The Q(BD) of interpoly-oxide can be reached as high as 35 C/cm(2). This scheme is very promising for nonvolatile memory devices.
  • Thumbnail Image
    Item type:Item,
    Suppression of boron penetration in BF2+-implanted poly-Si gate
    (1996-12-01)
    Chao, TS
    ;
    Chu, CH
    ;
    Wang, CF
    ;
    Ho, KJ
    ;
    Lei, TF
    In this paper, a comprehensive study of gate engineering to suppress the penetration of boron in p-type metaloxide-semiconductor held-effect transistor (MOSFET) with the p(+)-poly-Si-gate is reported. Four types of poly-Si gate structure, two types of gate dielectrics were investigated to suppress the boron penetration. Among the different gate structures, the stacked amorphous silicon structure was found to be the most effective way to retard the boron penetration. N2O oxide exhibited a better retarding of the boron diffusion as compared with the O-2 oxide. It was found that a combination of stacked amorphous silicon with N2O oxide is the most effective way to suppress the boron penetration. Thermal stability, oxide integrity, and D-it of this sample are superior to all the other samples.
  • Thumbnail Image
    Item type:Item,
    Mobility enhancement in local strain channel nMOSFETs by stacked a-Si/poly-Si gate and capping nitride
    (2005-04-01)
    Lu, TY
    ;
    Chao, TS
    ;
    交大名義發表
    ;
    National Chiao Tung University
    A local strained channel nMOSFET has been fabricated by a stress control technique utilizing a stacked a-Si/poly-Si gate and a SiN capping layer. It is found that the transconductance (G(M)) of nMOSFETs increases as the thickness of a-Si is increased. We also found that the G(M) of devices with the SiN capping layer exhibits a 17% increase compared to that of its counterparts. The stacked gate a-Si/poly-Si with the capping layer can improve the G(M) further to 29% more than the single-poly-Si gate structure without SiN capping layer.
  • Thumbnail Image
    Item type:Item,
    Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
    (1998-10-01)
    Lai, CS
    ;
    Chao, TS
    ;
    Lei, TF
    ;
    Lee, CL
    ;
    Huang, TY
    A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
  • Thumbnail Image
    Item type:Item,
    A study on the radiation hardness of flash cell with horn-shaped floating-gate
    (1997-09-01)
    Huang, TY
    ;
    Jong, FC
    ;
    Chao, TS
    ;
    Lin, HC
    ;
    Leu, LY
    The effects of radiation on the characteristics of split-gate electrical erasable programmable read only memory (EEPROM)/flash cells with recently-proposed horn-shaped floating gates are studied in terms of cell read current; data retention, cycling endurance, program/erase efficiency, threshold voltage and junction leakage. Our results show that the cells appear to survive after 1 Mrad (Si) Co-60 irradiation. Moreover, the after-irradiation cell read current actually increases in the ''erase'' (i.e., low-threshold voltage, high-conducting) state (i.e., improves), albeit the cell read current also increases in the ''program'' (i.e., high-threshold voltage, low-conducting) state (i.e., a degradation). Our results also show that, despite an improvement in the initial read current in the ''erase'' state immediately after radiation, the write/erase cycling endurance of the flash cells is significantly impeded after irradiation, due to a much faster ''window closure'' rate in the ''erase'' state, although the cell read current is found to remain relatively stable in the ''program'' state after cycling.
  • Thumbnail Image
    Item type:Item,
    Physical and electrical characterization of ZrO2 gate insulators deposited on Si(100) using Zr(O-i-Pr)(2)(thd)(2) and O-2
    (2002-06-01)
    Chen, HW
    ;
    Huang, TY
    ;
    Landheer, D
    ;
    Wu, X
    ;
    Moisa, S
    The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precursor Zr(O-i-Pr)(2)(thd)(2) [where O-i-Pr is isopropoxide and thd is 2,2,6,6-tetramethyl-3,5-heptanedionate] were investigated. The organometallic was dissolved as a 0.15 M solution in octane and introduced into the deposition chamber using a liquid injection system. The deposition rate was insensitive to molecular oxygen flow but changed with liquid injection rate and was thermally activated in the range 390-550degreesC. No evidence of Zr-C and Zr-Si bonds were found in the X-ray photoelectron spectroscopy (XPS), spectra, and carbon concentrations, 0.1 atom %, the detection limit of the XPS depth profiling measurements, were obtained at the lowest deposition temperatures and deposition rates. High-resolution transmission electron microscopy showed the ZrO2 films to be polycrystalline as deposited, with an amorphous zirconium silicate interfacial layer. The effects of postdeposition annealing were also demonstrated. After proper annealing treatments, promising capacitance-voltage and current-voltage characteristics were achieved. A film with an equivalent oxide thickness of 2.3 nm showed current reductions of approximately two orders of magnitude when compared to SiO2, but some improvements are required if these films are to be used as a gate-insulator beyond the 100 nm CMOS (complementary metal oxide semiconductor) technology node. (C) 2002 The Electrochemical Society.
  • Thumbnail Image
    Item type:Item,
    Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistor
    (1996-09-16)
    Chao, TS
    ;
    Liaw, MC
    ;
    Chu, CH
    ;
    Chang, CY
    ;
    Chien, CH
    The mechanism of the nitrogen co-implant to suppress the boron penetration in p(+)-polycrystalline silicon gate has been investigated. The nitrogen coimplant with the BF, combines with the boron to form a B-N complex which results in a retardation of boron diffusion. It is found that metal-oxide-silicon capacitors with nitrogen implantation show improved electrical properties. (C) 1996 American Institute of Physics.
  • Thumbnail Image
    Item type:Item,
    Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
    (1998-02-19)
    Jong, FC
    ;
    Huang, TY
    ;
    Chao, TS
    ;
    Lin, HC
    ;
    Wang, MF
    The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.
  • Thumbnail Image
    Item type:Item,
    Evaluation of plasma charging damage in ultrathin gate oxides
    (1998-03-01)
    Lin, HC
    ;
    Chen, CC
    ;
    Chien, CH
    ;
    Hsein, SK
    ;
    Wang, MF
    Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.
  • Thumbnail Image
    Item type:Item,
    Characterization of polysilicon oxides thermally grown and deposited on the polished polysilicon films
    (1998-04-01)
    Lei, TF
    ;
    Cheng, JY
    ;
    Shiau, SY
    ;
    Chao, TS
    ;
    Lai, CS
    This work examines the characteristics of polyoxides thermally grown and deposited an polished polysilicon films. A well-controlled chemical mechanical polishing (CMP) process is also presented to achieve a planar surface morphology Tot polysilicon films. The thermally-grown and deposited polyoxides on the polished polysilicon films exhibit a lower leakage current, higher dielectric breakdown field, higher electron barrier height, lower electron trapping, rate, lower density of trapped charges, and markedly higher charge to breakdown (Q(bd)) than the conventional polyoxide. In particular, the deposited polyoxide on the polished polysilicon film has the highest dielectric breakdown field, lowest electron trapping rate, and highest charge to breakdown due to the planar polyoxide/polysilicon interface. In addition, experimental results indicate that the trapped charges of the polished samples are located in the polyoxides' upper portion, which differs from conventional polyoxides. Undoubtedly, the deposited polyoxide on the polished polysilicon film considered herein is the most promising candidate to yield optimum characteristics of polyoxide.