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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chen, CFSubject: search.filters.subject.CVD

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Now showing 1 - 3 of 3
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    Electronic properties of phosphorus-doped triode-type diamond field emission arrays
    (2001-11-01)
    Chen, CF
    ;
    Tsai, CL
    ;
    Lin, CL
    ;
    材料科學與工程學系
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    Department of Materials Science and Engineering
    In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. We use a bias-assisted microwave plasma chemical vapor deposition (BAMPCVD) system to synthesize P-doped and B-doped diamond. Based on our experimental results, it showed dendrite-like diamond with non-doped and nanotube-like diamond with B- or P- doping. Doping phosphorus or boron can enhance its electric characteristic by reducing the turn-on voltage and enhancing the emission current density. The turn-on voltage of non-doped, B-doped and P-doped is 15, 8 and 5 V, respectively. The field emission current (I-a) of non-doped, B-doped and P-doped is 4 muA (at 45 V), 76 muA (at 77 V) and 322 muA (at 120 V), respectively. (C) 2001 Elsevier Science B.V. All rights reserved.
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    Study of carbon nanoemitters using CO2-CH4 gas mixtures in triode-type field emission arrays
    (2002-03-01)
    Chen, CF
    ;
    Tsai, CL
    ;
    Lin, CL
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    In this study. we used methane/carbon dioxide gas mixtures to deposit nanoemitters on the gate-structured metal-insulator-semiconductor (MIS) diodes. Due to the nanoemitters growing in a high carbon concentration gas source of CH4/CO2, the growth rate is better than conventional mixtures by using hydrocarbons diluted in hydrogen. Moreover, the bias also promotes the growth rate in the CH4/CO2 gas mixtures. In addition, selected area deposition (SAD) of emitters was successfully achieved by using the Pt layer as inhibitor in the bias assisted microwave plasma chemical vapor deposition (BAMPCVD). The field emission. current and the current density of nanoemitters on field emission arrays (FEAs) are 154 LA and 490 mA cm(-2), respectively. This may be due to the following reasons: (I) short gate-emitter spacing; (II) small gate aperture; and (III) emitter with a sharp feature. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Catalyzed growth model of carbon nanotubes by microwave plasma chemical vapor deposition using CH4 and CO2 gas mixtures
    (2003-10-01)
    Chen, M
    ;
    Chen, CM
    ;
    Koo, HS
    ;
    Chen, CF
    ;
    材料科學與工程學系
    Catalyst growth carbon nanotubes (CNTs) have been synthesized successfully by microwave plasma chemical vapor deposition using CH4-CO2 gas sources, and Fe, Ti, Fe/Ti as catalysts. Significant difference of morphology in the carbon deposition was observed between Fe and Ti catalyst. By adjusting growth parameters of CH4 to CO2, a high yield of vertically aligned CNTs can be found in an Fe-deposited substrate. Ti is shown to be not suitable as a catalyst in CNT production. In the present work, we investigated the effect of H-2 plasma pretreatment on the CNT growth from the viewpoint of catalyst morphology, using Fe as the catalyst. After the H-2 pretreatment, significant catalyst particle sintering was observed and resulted in a broad size distribution of catalyst particles. The diameter of CNTs was governed by the catalyst particle size. The diameter of CNTs thus increased as the H-2 plasma pretreated time increased. The CNT diameters were distributed in the range approximately 10-20 nm when Fe-deposited substrate was not pretreated. However, the diameter of CNTs increased from 30 to 300 nm when Fe-deposited substrate was pretreated from 1 to 15 min. The CNT growth model in catalysts, as a function of a gas environment of CH4-CO2 gas mixture, was investigated. (C) 2003 Elsevier Science B.V. All rights reserved.