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Author: search.filters.author.Chen, CF

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Now showing 1 - 10 of 91
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    Multiple soliton interactions in a polarization-division multiplexing system
    (1998-02-01)
    Chi, S
    ;
    Chen, CF
    ;
    Dung, JC
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    光電工程研究所
    ;
    Institute of EO Enginerring
    We numerically study multiple soliton interactions in a polarization-division multiplexing transmission system. It is found that, unlike the transmission system of solitons with the same polarization, the two soliton interaction is not the strongest compared to the interaction of more than two solitons. Therefore, the maximum transmission distance limited by the interaction of solitons cannot be inferred by the collision distance of two solitons in a polarization-division multiplexing system and the interactions of more solitons must be considered. (C) 1998 Elsevier Science B.V.
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    The synthesis and characterization of phosphorus-doped diamond films using trimethyl-phosphite as a doping source
    (1996-05-01)
    Chen, CF
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    Lo, SF
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    Chen, SH
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Producing impurity-doped diamond films is a critical task for modern electronic applications. In this study, the effects of phosphorus in the gas phase on the morphological features of polycrystalline diamond films were investigated. The diamond films were prepared on n-type Si(100) substrates by the microwave plasma chemical vapour deposition. A trimethyl-phosphite vapour was introduced to the CH4-CO2 gas mixture as a dopant source. Surface morphology changed from well-defined facets to ball-like features by increasing the dopant concentration in the gas phase. Phosphorus-doped diamond films of good quality and well defined facets could be obtained by reducing the carbon concentration of reactant gases. This reduction could be achieved by decreasing the CH4 flow rates during the deposition process. An increase in the the dopant source caused the growth rate to become lower, the nucleation density to reduce drastically, and the relative intensity of XRD characteristic (110) peak to increase significantly.
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    Modelling of a polarization-division multiplexing soliton transmission system
    (1998-08-01)
    Chen, CF
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    Chi, S
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    光電工程學系
    ;
    Department of Photonics
    We have simulated numerically a polarization-division multiplexing soliton transmission system by using propagation equations with and without the third-order dispersion and Raman shift terms, respectively. it is found that the Raman shift terms can reduce the soliton interactions and hence the allowed transmission distance increases.
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    Optical solitons in a dispersion-flattened fiber with linear and quadratic intensity-dependent refractive-index changes
    (1998-08-01)
    Chen, CF
    ;
    Chi, S
    ;
    光電工程學系
    ;
    Department of Photonics
    Optical-soliton propagation in a dispersion-flattened fiber is investigated, of which third-order dispersion is nil and fourth-order dispersion exists with linear and quadratic intensity-dependent refractive-index changes. For four possible sign combinations of the second-order dispersion and the Kerr-effect terms, we found that there are two types of bright-soliton solutions and two types of dark-soliton solutions. The magnitude of the fourth-order dispersion parameter is related to the quadratic intensity-dependent nonlinearity coefficient, and their signs are opposite. The peak power and the period of the soliton are determined by the magnitude of the fourth-order dispersion parameter. We numerically show that the bright-soliton solution in anomalous second-order dispersion and the positive Kerr coefficient regime is stable and becomes quasi stable when the Raman effect is considered. (C) 1998 Optical Society of America [S0740-3224(98)01308-3] OCIS codes: 060.4370, 060.5530.
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    Subwavelength spatial solitons of TE mode
    (1998-12-01)
    Chen, CF
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    Chi, S
    ;
    光電工程學系
    ;
    Department of Photonics
    The wave equation of TE subwavelength beam propagations in a nonlinear planar waveguide is derived. This equation contains more higher-order linear and nonlinear terms than the nonlinear Schrodinger equation. The analytic solution of TE subwavelength spatial soliton is found to be the same as the conventional spatial soliton in amplitude but different in phase. The numerical results show that the analytic solution is stable. (C) 1998 Elsevier Science B.V. All rights reserved.
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    Improving the soliton transmission by optical phase conjugation in a polarization-division multiplexing system
    (1999)
    Chen, CF
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    Chi, S
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    光電工程學系
    ;
    Department of Photonics
    Undoing the soliton interaction by optical phase conjugation in a polarization-division multiplexing is numerically studied. It is shown that the soliton interaction can be undone well when the conjugator is applied before there are significant changes in the pulse shape. We have also found that, when the optical phase conjugation is used, the timing jitter of the solitons can be effectively reduced and the allowed transmission distance will increase.
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    Fabrication and characterization of various carbon-clad silicon microtips with ultra-small tip radii
    (2000-02-01)
    Tarntair, FG
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    Hong, WK
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    Ku, TK
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    She, NJ
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    Chen, CF
    Various types of ultra sharp Si microtips and multitips with carbon-clading films were fabricated by microwave plasma chemical vapor deposition (MPCVD). The radii of these Si tips prepared by bias assisted carburization (BAC) can he reduced below 300 Angstrom under a low deposition temperature (<550 degrees C). Field emission characterization was performed in a high vacuum environment. With an applied anode voltage of 1100 V, emission currents of 169 mu A, 198 mu A, and 385 mu A can be achieved from an array of 50 x 50 BAG-clad Si monotips, Si multitips via high bias, and Si multitips via the Ar presputtering technique, respectively. Both the auger electron spectroscopy (AES) and X-ray photo-electron spectroscopy (XPS) studies of the C l s peak suggest that the BAC-cladding is more likely to be a carbon-rich SiC layer or a SiC layer mixed with a small amount of diamond nuclei. This BAC-carbon can be used as an effective nucleation layer for further diamond nuclei. Due to the low field emission, low temperature, and large area growth capability, the sharp BAC-clad Si multitip field emitter arrays are attractive Tor flat panel display applications.
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    Fabrication and characterization of the conic diamond field emission arrays with gated structure
    (2000-04-01)
    Chen, CF
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    Wang, HC
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    Hsieh, HC
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    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    In this study, we successfully fabricate conic diamond field emitter array devices by applying an IC process capable of forming a metal-insulator-semiconductor (MIS) diode structure. The conic diamonds are selectively deposited and, ultimately, grow inside of the electric gates. In addition, the field emission current is measured when applying +1000V voltage on the anode in which the applied gate voltage is varied from 0 to 50 volts. Experimental results indicate that the threshold voltage of this device is about 12 V, and the field emission current is about 40 mu A when the gate voltage is 30 V. Furthermore, current-voltage (I-V) characterization of the electrical properties demonstrates that the reason fur the change of the threshold voltage of conic diamond held emission arrays (FEAs) fabricated under different CH4 concentration may be attributed to the diamond tip radius.
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    Emission current influence of gated structure and diamond emitter morphologies in triode-type field emission arrays
    (2000-04-01)
    Chen, CF
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    Hsieh, HC
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Field emission display is evolving as a promising technique for the future generation of flat panel displays. Characteristics affecting the power of field emitter arrays include the shape and work function of emission materials, distance between tip and gate, and the environmental vacuum condition. In this work, we present a novel scheme that involves a new fabrication process of gate structure metal-insulator-semiconductor (MIS) diode using IC technology. Deposition of the diamond film in this MIS diode forms a column-like diamond with gated field emission arrays (FEAs). This process is completed using a bias-assisted microwave plasma chemical vapor deposition system. Our results indicate that the threshold voltage of column-like diamond FEAs is about 10 V, and the field emission current density is about 139 mA cm(-2) (at V-gc = 20 V). The diamond field emitter array devices with the new gate structure and tip morphology significantly influence the electron field emission characteristics. (C) 2000 Elsevier Science S.A. All rights reserved.