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Author: search.filters.author.Chen, CW

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    Reliability of strained SiGe channel p-channel metal-oxide-semiconductor field-effect transistors with ultra-thin (EOT=3.1nm) N2O-annealed SiN gate dielectric
    (2005-06-01)
    Chen, CW
    ;
    Chien, CH
    ;
    Chen, YC
    ;
    Hsu, SL
    ;
    Chang, CY
    The p-channel metal-oxide-semi conductor field-effect transistor (pMOSFET) with 50-nm-thick Si0.85Ge0.15 channel and in ultra-thin (EOT = 3.1 nm) N2O-annealed SiN gate dielectric has been shown to have well-performing on/off and output characteristics. Several methodologies for the device reliability characterization, such as stress-induced-leakage-current (SILC), drain-avalanche-hot-carrier (DAHC) injection, channel hot-carrier (CHC) injection and negative-bias-temperature-instability (NBTI), have been used and the results were compared. In terms of the long-term degradation, the excellent quality of the N2O-annealed SiN gate dielectric can be firmly obtained because only negligible degradations have been found after stressing no matter which technique was employed. Even so, the experimental results have been compared and we found that the HC degradation is worse than the NBTI degradation and the channel-hot-carrier (CHC) stressing is the worst case for all kinds of reliability testing. Meanwhile, we have also verified that the interface state generation is the dominant mechanism responsible for the HC-induced degradation while the electron trapping dominates the device degradation for the NBTI stressing.
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    Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatments
    (2005-01-01)
    Chen, CW
    ;
    Chien, CH
    ;
    Perng, TH
    ;
    Yang, MJ
    ;
    Liang, JS
    We have investigated the effects that various pre-deposition surface treatments, such as HF dipping (HF-dipped), NH3 surface nitridation (NH3-annealed), and rapid thermal oxidation (RTO-treated), have on the electrical properties of HfO2 gate dielectrics. The NH3-annealed technique is superior to the others because the dielectric subject to NH3 surface nitridation possesses a tremendously reduced leakage current, the lowest equivalent oxide thickness (EOT),and a moderate, hysteresis width. In contrast, the RTO-treated preparation can only effectively reduce the leakage current by its resultant increased physical thickness and displays considerably severe hysteresis. We have also studied the dependence of hysteresis on the initial inversion bias (V-inv), temperature, and frequency for-all splits. The hysteresis width increases upon increasing the initial inversion bias and decreasing the temperature, but it is rather insensitive to the measuring frequency. In addition, our experimental results indicate that the hysteresis width depends exponentially on both the initial inversion bias and the temperature, and it can be described well by a general empirical relationship that has the form C(T) (.) exp(RvVinv,). Finally, the conduction currents through the dielectrics are probably dominated by trap-assisted tunneling (TAT) because the current densities display stronger temperature dependence at low voltage than they do at higher voltages. Based on the trap-assisted tunneling model, the corresponding parameters have been extracted and are presented.
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    TiSixOy as an absorptive shifter for embedded phase-shifting mask in 248 nm and the modification of R-T method for the determination of shifter's n and k
    (1998-03-01)
    Loong, WA
    ;
    Chen, CW
    ;
    Chang, YH
    ;
    Lin, CM
    ;
    Cui, Z
    TiSixOy as an absorptive shifter (embedded layer) for attenuated phase-shifting mask (APSM) in 248 nm wavelength is presented. TiSixOy thin film was formed by plasma sputtering of Ti (25 similar to 55 W) and Si (200 similar to 250 W) under Ar (30 seem) and oxygen (0.1 similar to 0.4 sccm). For required phase shift degree theta=180 degrees, calculated thickness d(180) of TiSixOy Film is within the range of 87 similar to 120 nm depending on its reflectivity R, transmittance T, refractive index n and extinction coefficient k. Taguchi design of experiment has been applied to study the plasma etching selectivity of TiSixOy over APSM's substrate quartz (SiO2), under Cl-2:NF3=20:30 seem; 50 W and 60 mtorr, selectivity of 10:1 similar to 35:1 was observed. Modifications of reflectivity-transmittance (R-T) method have been developed for the determination of this absorptive shifter's n and k.
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    A design approach to the multi-objective facility layout problem
    (1999-03-20)
    Chen, CW
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    Sha, DY
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    工業工程與管理學系
    ;
    Department of Industrial Engineering and Management
    A new multi-objective heuristic algorithm for resolving the facility layout problem is presented in this paper. It incorporates qualitative and quantitative objectives and resolves the problem of inconsistent scales and different measurement units. We consider suboptimal solutions since optimal methods are computationally unfeasible to large layout problems. In this paper, we develop the dominant index (DI) and incorporate it in our heuristic algorithm to guarantee the quality of proposed solutions. Moreover, a new measure of solution quality, dominant probability (D-p), is offered to determine the probability that one layout is better than the others. Computational results show that our proposed heuristic algorithm is an efficient method for obtaining good-quality solutions.
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    Optimization of OMVPE-grown GaInP/GaAs quantum well interfaces
    (1999-10-01)
    Chiou, SW
    ;
    Lee, CP
    ;
    Hong, JM
    ;
    Chen, CW
    ;
    Tsou, Y
    A new and improved method of growing Al-free GaInP/GaAs quantum wells (QWs) is presented. We found that both interfaces are important for obtaining a high-quality quantum well. With an added H-2 purge and PH3 preflow procedure, we have significantly improved the GaInP on GaAs interface by eliminating the unwanted dark line region at the interface. At the GaAs on GaInP interface, we added a thin GaAsP layer. This layer effectively prevents the In memory effect at the interface. As a result of this new growth procedure, a linewidth of 6.7 meV (at 20 It) for the quantum well emission was achieved. (C) 1999 Elsevier Science B.V. All rights reserved.
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    Wide angle distributed Bragg reflectors for 590 nm amber AlGaInP light-emitting diodes
    (2000-02-15)
    Chiou, SW
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    Lee, CP
    ;
    Huang, CK
    ;
    Chen, CW
    ;
    電子工程學系及電子研究所
    A structure for high brightness light-emitting diodes (LEDs) is demonstrated. A distributed Bragg reflector (DBR) is used to enhance the quantum efficiency of the LEDs. This unique DBR uses a composite structure that consists of two DBRs to provide both high reflectivity and wide angle reflection. For 590 nm (amber range) AlGaInP LEDs, the quantum efficiency is increased to 5.05% by using this composite DBR structure. This result is much better than those obtained from conventional DBRs, and is comparable to that of wafer bonded AlGaInP LEDs. (C) 2000 American Institute of Physics. [S0021-8979(00)01704-7].
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    Fault-tolerant gamma interconnection networks by chaining
    (2000-03-01)
    Chen, CW
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    Lu, NP
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    Chen, TF
    ;
    Chung, CP
    ;
    資訊工程學系
    The authors propose two single-fault-tolerant gamma interconnection networks. The first is a partially chained gamma interconnection network (PCGIN) with two disjoint paths between any source-destination pair. A PCGIN has the characteristics of one fault tolerance and destination tag routing, but backtracking may be necessary when a fault occurs. To eliminate the backtracking penalties of a PCGIN, a fully chained gamma interconnection network (FCGIN); that can at least tolerate one link or switch fault at each stage without backtracking, is also proposed FCGIN has the advantages of destination tag routing, lower hardware costs than a PCGIN, low fault penalty, and strong reroutability.
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    Fault-tolerant gamma interconnection network without backtracking
    (2001-08-15)
    Chen, CW
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    Chung, CP
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    資訊工程學系
    ;
    Department of Computer Science
    A no-backtracking gamma interconnection network (NBGIN) is a modified gamma interconnection network (GIN) that can tolerate one switch or link fault without backward packet transmission. Basically, this can be achieved by providing two alternative paths at all intermediate nodes during the progression of routing through carefully designed algorithm. In this work, a destination tag routing named as NB function is designed. With this NB function, a packet can find an alternate path as soon as it encounters a switch or link fault in NBGIN. The major advantage of NBGIN over gamma-induced networks is that there is no rerouting penalty under a fault. In addition, NBGIN processes the characteristics of one-fault tolerance, destination tag routing, and dynamic rerouting. Furthermore, the routing and rerouting path can be simply determined by the destination tag only instead of being computed with the routing tag. (C) 2001 Elsevier Science Inc. All rights reserved.
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    Enhancing the resistance of low-k hydrogen silsesquioxane (HSQ) to wet stripper damage
    (2001-11-01)
    Chang, TC
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    Mor, YS
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    Liu, PT
    ;
    Tsai, TM
    ;
    Chen, CW
    The interaction between low-k hydrogen silsesquioxane (HSQ) film and wet stripper was investigated. The wet stripper has been commonly used to remove photoresister in IC integration processing. However, the high content of alkalinity in the stripper solution often leads to the hydrolysis of HSQ film, forming dangling bonds in the HSQ. The dangling bonds in the HSQ film can easily react with hydroxide ion (OH-) in wet stripper solution and form Si-OH bonds. The resultant HSQ film will tend to uptake water and consequently increase both the leakage current and dielectric constant. In this study, H-plasma pre-treatment was applied to the HSQ film. The hydrogen plasma treatment passivates the HSQ surface and prevent HSQ from water uptake during photoresist stripping. Therefore, dielectric degradation can be avoided with the H-2-plasma pre-treatment. (C) 2001 Elsevier Science B.V. All rights reserved.
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    The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damage
    (2001-11-01)
    Chang, TC
    ;
    Mor, YS
    ;
    Liu, PT
    ;
    Tsai, TM
    ;
    Chen, CW
    The integration process, low-k hybrid-organic-siloxane-polymers (HOSP) and photoresist stripping process have been investigated. The dielectric properties of HOSP films are degradated after photoresist removal. This is because photoresist stripping processes destroy the functional groups and induce moisture uptake in HOSP films. In this study, NH3-plasma treatment was used for HOSP films to form a thin nitrogen-containing layer, preventing HOSP films from O-2 plasma ashing and chemical wet stripper damage during photoresist removal. The leakage current is decreased significantly and the dielecric constant is maintained at a low value after photoresist removal. These experimental results show that NH, treatment is a promising technique to enhance the resistance of HOSP films to the photoresist stripping process. (C) 2001 Elsevier Science B.V. All rights reserved.