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Author: search.filters.author.Chen, Chia-FuSubject: search.filters.subject.CVD

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    Low-temperature CVD growth of carbon nanotubes for field emission application
    (2007-03-01)
    Chen, Kuang-Chung
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    Chen, Chia-Fu
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    Lee, Jen-Hao
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    Wu, Tai-Lin
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    Hwang, Chian-Liang
    For field emission application, carbon nanotube emitters were synthesized on catalyst-mixed thick-film electrode lower than 500 degrees C by chemical vapor deposition (CVD) method. Mixtures of Ni/tetraethyl silicate (TEOS) and conducting Ag powders were applied to fabricate the electrode by screen-printing processes. These processes are simple, low cost and easy to scale up for large sized panels. The field emission properties performed uniform emission image and high brightness (no less than 500 nits). The turn-on electric field was about 3.85 V/mu m with an emission current destiny of 10 mu A/cm(2), and the achieved current density was 1 mA/cm(2) driven by 5 V/mu m. (c) 2006 Elsevier B.V. All rights reserved.
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    Thick-film structure geometry effect on carbon nanotubes synthesized by chemical vapor deposition
    (2008-06-01)
    Chen, Kuang-Chung
    ;
    Chen, Chia-Fu
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    Whang, Wha-Tzong
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    Lee, Shu-Hsing
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    Chen, Kuo-Feng
    In chemical vapor deposition (CVD) technology, the mass flow transport behaviors of precursor gases play an important role particularly in thick-film normal triode structures. The depth dimension of dielectric holes in thick-film normal triode structures may range from 10 to 50 mu m. The relationship between carbon nanotube (CNT) synthesis and aspect ratio of dielectric holes is investigated in this work. In high-aspect-ratio dielectric holes (such as narrow and deep holes), precursor diffusion driven by concentration gradient must be combined with pumping assistance in order to force reactive gas to flow toward the catalyst at the bottom of dielectric holes for CNT growth.