<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, Chieh-YangSubject: search.filters.subject.Device simulation

Search Results

Now showing 1 - 2 of 2
  • Thumbnail Image
    Item type:Item,
    Capacitance Characteristic Optimization of Germanium MOSFETs with Aluminum Oxide by Using a Semiconductor-Device-Simulation-Based Multi-Objective Evolutionary Algorithm Method
    (2015-04-03)
    Li, Yiming
    ;
    Chen, Chieh-Yang
    ;
    傳播研究所
    ;
    電機資訊學士班
    ;
    Institute of Communication Studies
    This paper, for the first time, optimizes the characteristics of capacitance-voltage (C-V) of germanium (Ge) metal-oxide-semiconductor field effect transistors (MOSFETs) with aluminum oxide (Al2O3) by using a semiconductor-device-simulation-based multi-objective evolutionary algorithm (MOEA) technique. By solving a set of 2D semiconductor device transport equations, numerical simulation is intensively performed for the optimization of the C-V curve of Ge MOSFET devices. To optimize the capacitance of Ge MOSFETs with respect to the applied voltage, by minimizing the total errors of the C-V curve between the device simulation and a given specification (and experimentally measured data), the thicknesses of Al2O3 and GeO2, the work function of gate electrodes, the distribution range of channel doping, the dielectric constants of Al2O3 and GeO2, and the source/drain doping concentration are considered in the process of optimization. The semiconductor device simulation and the MOEA method are integrated and performed based on a unified optimization framework. According to the sharp variation characteristics of the C-V curve, except for using a residual sum of squares (RSS) (i.e., the sum of squares of residuals) as an objective function, physical key parts of the curve are also considered in the optimization problem. The engineering results of this study indicate that the semiconductor-device-simulation-based MOEA method shows great performance to optimize the parameters, which not only minimize the objective values but also match the curve shape.
  • Thumbnail Image
    Item type:Item,
    Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices
    (2013-09-01)
    Chen, Chien-Hung
    ;
    Li, Yiming
    ;
    Chen, Chieh-Yang
    ;
    Chen, Yu-Yu
    ;
    Hsu, Sheng-Chia
    In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (110) and (100) orientations of the devices. We further analyze four devices with different surface roughness along (100) and (100) orientations to demonstrate the influence of surface roughness on the total effective mobility. (C) 2013 Elsevier B.V. All rights reserved.