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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, Chieh-YangSubject: search.filters.subject.random position effect

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    On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps
    (2012)
    Li, Yiming
    ;
    Su, Hsin-Wen
    ;
    Chen, Chieh-Yang
    ;
    Cheng, Hui-Wen
    ;
    Chen, Yu-Yu
    In this work, we statistically study characteristic fluctuation of 16-nm-gate high-kappa/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-kappa/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs inside device channel and 2D RITs at HfO2/Si interface are incorporated into quantum mechanically corrected 3D device simulation. Device characteristics, as influenced by different degrees of fluctuation, are discussed in relation to RITs near the source and drain ends, and RDDs near the device channel surface and silicon substrate. Characteristic fluctuations are affected to different extents by the random combinatorial RDDs and RITs. Nonlinearly correlated RDDs and RITs further violate the statistical assumption of independent identical distributions between the RDDs- and RITs-induced random variables. Consequently, for the studied 16-nm-gate HKMG MOSFETs, the threshold voltage fluctuation induced by the combined RDs and ITs is less than their statistical sum due to local interaction of surface potentials resulting from the RDDs and RITs simultaneously. In contrast to RDDs fluctuation, the screening effect of device\'s inversion layer cannot effectively screen potential\'s variation resulting from RITs; thus, devices still have noticeable gate capacitance characteristic fluctuation under high gate bias.
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    Item type:Item,
    Upper/lower-side random dopant fluctuation on 16-nm-gate HKMG bulk FinFET
    (2015-01-01)
    Li, Yiming
    ;
    Huang, Wen-Tsung
    ;
    Chen, Chieh-Yang
    ;
    Chen, Yu-Yu
    ;
    資訊工程學系
    In this work, we for the first time classify dopants that exist near the source/drain side or the upper/lower side of silicon fin and explore the impact of random dopants\' (RDs) position on devices\' DC characteristic. The effects of random dopant fluctuation (RDF) on the performance of 16-nm-gate HKMG bulk FinFET are studied by using experimentally validated three-dimensional RDF device simulation. The dopants near the source side or the upper fin would induce large barrier for electrons, so the threshold voltage (Vth) will be increased in n-type HKMG bulk FinFET devices which have more dopants on the source side or the upper fin. In addition, the upper-fin\'s dopants are discovered to have larger influence on the profile of energy band. Moreover, the issue about Vth\'s fluctuation on both the planar MOSFET and the bulk FinFETs with different aspect ratios (AR) is studied. The higher-AR HKMG bulk FinFET devices have relatively smaller Vth\'s variation induced by RDF.