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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, Chien-ChihSubject: search.filters.subject.(NILC)

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    Enhanced performance and reliability of NILC-TFTs using FSG buffer layer
    (2012-02-15)
    Chen, Chien-Chih
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    Wu, YewChung Sermon
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    Chang, Chih-Pang
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    材料科學與工程學系
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    Department of Materials Science and Engineering
    A new manufacturing method for Ni-metal-induced lateral crystallization thin film transistors (NILC-TFTs) using fluorine-silicate-glass (FSG) was proposed. In FSG-TFTs, fluorine ion was implanted into the buffer oxide layer to form FSG before NILC processes. It was found FSG-TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high ON/OFF current ratio, low trap state density, low interface trap state density, and good reliability compared with typical NILC-TFTs. (c) 2011 Elsevier B.V. All rights reserved.