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Author: search.filters.author.Chen, HGSubject: search.filters.subject.chemical vapor deposition

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Now showing 1 - 3 of 3
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    Diamond deposition on Au/amorphotis Si thin films
    (2004-04-01)
    Kao, CK
    ;
    Yan, JK
    ;
    Chang, L
    ;
    Cho, SY
    ;
    Chen, HG
    Au/amorphous Si/SiO2/Si structure was used as substrate for diamond deposition by microwave plasma CVD. The Au-Si phase diagram shows a eutectic point at 363 degreesC. At deposition temperatures of 700-800 degreesC, the Au and amorphous Si films were alloyed as liquid during deposition, which resulted in formation of an array of single crystalline Si whiskers. Microstructural characterization shows that the Si whiskers have a diameter in the range of 50 nm-5 mum with facet on the top surface. The Si whiskers are shown to be oriented along <311> directions. Diamond particles deposited are found only on top of the Si whiskers. The diamond particles can be either of polycrystalline or single crystalline characteristics. (C) 2004 Elsevier B.V. All rights reserved.
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    Diamond nucleation on Ni3Al substrate using bias enhanced nucleation method
    (2005-02-01)
    Chen, HG
    ;
    Chang, L
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Diamond deposition with positive and negative bias enhanced nucleation (BEN) pretreatments on mirror-polished polycrystalline Ni3Al substrates has been investigated, respectively. It was found that diamond deposition on the substrates under both biasing exhibited significant variations among grains of different orientations. The substrate surface was found to be rough in the case of negative biasing, whereas it was smooth in the case of positive biasing. Thus, the correlation of the crystallographic orientation of grains on the samples with the diamond nucleation behavior was systematically characterized for the case of positive biasing by electron backscattered diffraction method with scanning electron microscopy. Diamond deposition on Ni3Al grains near (111) orientation results in higher nucleation densities, while the densities are low on (110) and (100) oriented grains. Also, the interfacial microstructure between diamond deposited and Ni3Al was characterized by cross-sectional transmission electron microscopy. (C) 2004 Elsevier B.V. All rights reserved.
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    Growth and characterization of chemical-vapor-deposited zinc oxide nanorods
    (2006-03-01)
    Wu, CL
    ;
    Chang, L
    ;
    Chen, HG
    ;
    Lin, CW
    ;
    Chang, TF
    ZnO nanorods were grown on Si substrates by metal-organic chemical vapor deposition (CVD). The ZnO nanorods were characterized by scanning electron microscopy, transmission electron microscopy (TEM), and X-ray diffraction. It was found that highly oriented ZnO single-crystalline nanorods were formed only on the substrate coated with a gold film. Without the gold, ZnO was deposited as a continuous film. No Au was observed on top of the ZnO nanorods, implying that the Au plays no role as catalytic metal in vapor-liquid-solid mechanism for formation of ZnO nanorods. In CVD, oriented ZnO nanorods along the c-axis were grown as a result of < 111 > textured Au. High-resolution TEM shows that the gold layer and ZnO are in orientation relationship of Au 111 planes//ZnO (0002) basal planes. (c) 2005 Elsevier B.V. All rights reserved.