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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chen, HGSubject: search.filters.subject.nucleation

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Now showing 1 - 3 of 3
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    Diamond growth onCoSi(2)/Si by bias-enhanced microwave plasma chemical vapor deposition method
    (2001-11-01)
    Chen, MR
    ;
    Chang, L
    ;
    Chang, DF
    ;
    Chen, HG
    ;
    材料科學與工程學系
    Diamond was grown on polycrystalline CoSi2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach similar to 10(9) cm(-2) with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture. (C) 2001 Elsevier Science B.V. All rights reserved.
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    Diamond nucleation on Ni3Al substrate using bias enhanced nucleation method
    (2005-02-01)
    Chen, HG
    ;
    Chang, L
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    Diamond deposition with positive and negative bias enhanced nucleation (BEN) pretreatments on mirror-polished polycrystalline Ni3Al substrates has been investigated, respectively. It was found that diamond deposition on the substrates under both biasing exhibited significant variations among grains of different orientations. The substrate surface was found to be rough in the case of negative biasing, whereas it was smooth in the case of positive biasing. Thus, the correlation of the crystallographic orientation of grains on the samples with the diamond nucleation behavior was systematically characterized for the case of positive biasing by electron backscattered diffraction method with scanning electron microscopy. Diamond deposition on Ni3Al grains near (111) orientation results in higher nucleation densities, while the densities are low on (110) and (100) oriented grains. Also, the interfacial microstructure between diamond deposited and Ni3Al was characterized by cross-sectional transmission electron microscopy. (C) 2004 Elsevier B.V. All rights reserved.
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    The orientation effect of silicon grains on diamond deposition
    (2005-11-01)
    Su, YH
    ;
    Chang, L
    ;
    Chen, HG
    ;
    Yan, JK
    ;
    Chou, T
    Diamond deposition on mirror-polished polycrystalline silicon substrates which have grains in various orientations has been investigated using electron backscatter diffraction (EBSD) method with scanning electron microscopy (SEMI). Diamond was deposited by microwave plasma chemical vapor deposition with application of a negative bias voltage oil the substrate. The evidence from systematic SEM observations shows that silicon orientation determined by EBSD has a strong effect on diamond nucleation. In general, the diamond nucleation density on Si grains oriented close to < 100 > is the highest, while it is the lowest for those grains close to < 111 >, under the same experimental conditions for deposition. The same phenomena have been observed in the range of methane concentration from 2% to 4% in hydrogen. (c) 2005 Elsevier B.V. All rights reserved.