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Author: search.filters.author.Chen, HHSubject: search.filters.subject.optical properties

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Now showing 1 - 3 of 3
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    Luminescence intensity reduction in Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
    (2001-04-01)
    Shu, CK
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    Chen, HH
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    Lee, WH
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    Pan, YC
    ;
    Huang, HY
    Photoluminescence dynamic responses of a heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy have been investigated. As the probe power density increased from 2.5 to 925 W/cm(2), a Mg-related emission band shifted from 2.82 to 3.16 eV revealing characteristics of donor-acceptor pair recombination. The intensity evolution also showed slow decay that suggests the metastable emission behavior. A simple potential barrier model was proposed to occur between the Mg related deep levels and common Mg acceptor level, which impedes electron relaxation and thus slows down the luminescence decay. From the variation of decay time constant with temperature. a barrier energy was deduced to be about 69 meV which is very close to the electrical result of 68 meV.
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    Effect of annealing on the structural and optical properties of AgGaS2 thin films prepared by pulsed laser deposition
    (2002-11-01)
    Hsu, HC
    ;
    Chen, HH
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    Kuo, SY
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    Chang, CS
    ;
    Hsieh, WF
    The influence of annealing on the AgGaS2 films groom by pulsed laser deposition has been investigated. The X-ray diffraction results show the AgGaS2 films were found with preferential orientation (1 1 2) normal to the surface and silver droplets,were diminished after the post-annealing. Photoluminescence (PL) measurements reveled the exciton energy is slightly red shifted that is possibly due to the thermal strain effect. The binding energy of the shallow, donors is similar to28 meV determined from temperature dependent PL spectra, In addition, the A-exciton and the B/C-exciton could be observed in the transmittance spectra at room temperature. (C) 2002 Elsevier Science B.V. All rights reserved.
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    Color-saturated and highly efficient top-emitting organic light-emitting devices
    (2005-05-01)
    Hsu, SF
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    Lee, CC
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    Hwang, SW
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    Chen, HH
    ;
    Chen, CH
    Color-saturated and highly efficient top-emitting organic light-emitting devices (OLEDs) were developed. The device structure studied was glass/reflective silver/indium-tin oxide (ITO; 50, 75, 100, 125 and 150 nm, respectively)/organic electroluminescent (EL) stack/calcium (200 angstrom)/ silver (150 angstrom). By changing the thicknesses of ITO from 50-150 nm in the reflective ITO/Ag anode, different emissive colors from bluish green to orange can be obtained from aluminum tris(8-hydroxyquinoline) (Alq(3)) emitter. By using 2-{2-(t-butyl)-6-[(E)-2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-pyrido[3,2,1-ij]quinoline-9-yl)-1-ethenyl]-4H-4-pyranliden}malonitrile (DCJTB), 10-(1,3-benzothiazol-2-yl)- 1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H, 11H-pyrano[2,3-f]pyrido[3,2,1-ij]quinoline-11-one (C-545T) and p-bis(p-N,N-diphenyl-aminostyryl)benzene (DSA-ph) as dopants, highly saturated red, green, and blue (RGB) emissions with Commission Internationale de L'Eclairage chromaticity coordinates of (0.64, 0.36), (0.14, 0.75) and (0.14, 0.08) were obtained, respectively. (c) 2004 Elsevier B.V. All rights reserved.