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Author: search.filters.author.Chen, Hsin-ChuSubject: search.filters.subject.Quantum dots

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Now showing 1 - 4 of 4
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    High-quality Quantum-Dot-Based Full-Color Display Technology by Pulsed Spray Method
    (2013)
    Chen, Kuo-Ju
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    Chen, Hsin-Chu
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    Tsai, Kai-An
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    Lin, Chien-Chung
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    Tsai, Hsin-Han
    We fabricated the colloidal quantum-dot light-emitting diodes (QDLEDs) with the HfO2/SiO2-distributed Bragg reflector (DBR) structure using a pulsed spray coating method. Moreover, pixelated RGB arrays, 2-in. wafer-scale white light emission, and an integrated small footprint white light device were demonstrated. The experimental results showed that the intensity of red, blue, and green (RGB) emissions exhibited considerable enhancement because of the high reflectivity in the UV region by the DBR structure, which subsequently increased the use in the UV optical pumping of RGB QDs. In this experiment, a pulsed spray coating method was crucial in providing uniform RGB layers, and the polydimethylsiloxane (PDMS) film was used as the interface layer between each RGB color to avoid cross-contamination and self-assembly of QDs. Furthermore, the chromaticity coordinates of QDLEDs with the DBR structure remained constant under various pumping powers in the large area sample, whereas a larger shift toward high color temperatures was observed in the integrated device. The resulting color gamut of the proposed QDLEDs covered an area 1.2 times larger than that of the NTSC standard, which is favorable for the next generation of high-quality display technology.
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    Improving efficiency of InGaN/GaN multiple quantum well solar cells using CdS quantum dots and distributed Bragg reflectors
    (2013-10-01)
    Tsai, Yu-Lin
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    Lin, Chien-Chung
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    Han, Hau-Vei
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    Chang, Chun-Kai
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    Chen, Hsin-Chu
    This work demonstrates hybrid InGaN/GaN multiple quantum well (MQW) solar cells with enhanced power conversion efficiency using colloidal CdS quantum dots (QDs) and back-side distributed Bragg reflectors (DBRs). CdS QDs can absorb ultraviolet (UV) photons, which are strongly absorbed by indium tin oxide (ITO), and they emit photons with a longer wavelength. This process improves the collection of photon-generated carriers and is known as the luminescence down-shifting (LDS). Accordingly, CdS QDs can compensate for the poor utilization of UV photons in an ITO layer, enhancing the external quantum efficiency (EQE) in the UV range. The DBRs on the back of the solar cells can reflect photons of longer wavelengths back into the absorber layer, increasing the EQE (380-440 nm). The combination of CdS QDs and DBRs results in broadband EQE enhancement, and yields an overall power conversion efficiency that is 20.7% better than that of a reference device without CdS QDs and DBRs. (C) 2013 Elsevier B.V. All rights reserved.
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    Enhancement of power conversion efficiency in GaAs solar cells with dual-layer quantum dots using flexible PDMS film
    (2012-09-01)
    Chen, Hsin-Chu
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    Lin, Chien-Chung
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    Han, Hau-Vei
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    Chen, Kuo-Ju
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    Tsai, Yu-Lin
    "This study demonstrates the high performance of GaAs solar cells with dual-layer CdS quantum dots (QDs) carried by flexible polydimethylsiloxane (PDMS) film. Several parameters were enhanced, including the short circuit current, fill factor, and power conversion efficiency, which were measured under white light illumination similar to the solar spectrum. The flexible PDMS film was fabricated using the spin-coating technique, and was then used to embed dual-layer CdS QDs. Different concentrations of QDs were applied in this design to test the optimal combination. The proposed scheme enhances power conversion efficiency by 22%, compared to a GaAs solar cell without CdS QDs. The photon down-conversion capability in the ultraviolet (UV) range and additional antireflection capability in the longer visible-IR range were verified through the external quantum efficiency. (C) 2012 Elsevier B.V. All rights reserved."
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    Improved efficiency for nanopillar array of c-Si photovoltaic by down-conversion and anti-reflection of quantum dots
    (2012)
    Lin, Chien-Chung
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    Chen, Hsin-Chu
    ;
    Han, Hau-Vei
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    Tsai, Yu-Lin
    ;
    Chang, Chia-Hua
    Improvement of efficiency for crystalline silicon (c-Si) with nanopillar arrays (NPAs) solar cell was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by colloidal lithography of self-assembled polystyrene (PS) nanospheres with a 600 nm in size and reactive-ion etching techniques, and then a colloidal CdS QDs with a concentration of 5 mg/mL was spun on the surface of c-Si with NPAs solar cell. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. Additionally, we also found that the device with CdS QDs shows a 32% reduction in electrical resistance, compared with the one without QDs solar cell, under an ultraviolet (UV) light of 355nm illumination. This reduced electrical resistance can directly contribute to our fill-factor (FF) enhancement. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency (EQE) of the device were measured and analyzed. Based on the spectral response and optical measurement, we believe that CdS QDs not only have the capability for photon down-conversion in ultraviolet region, but also provide extra antireflection capability.