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Chemical mechanical polishing for selective CVD-W
(1997-10-30)
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Chemical mechanical polishing for selective CVD-W
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Chemical mechanical polishing for selective CVD-W
Wang, MT
;
Yeh, WK
;
Tsai, MS
;
Tseng, WT
;
Chang, TC
This work investigates chemical mechanical polishing (CMP) for W-filled contact holes, vias, and trenches by selective chemical vapor deposition. A novel process that combines the CMP technique with selective chemical vapor deposition of tungsten (CVD-W) was employed to remove nail heads due to overgrowth and W-particles on the surface of dielectric due to selectivity loss. The overfilled nail heads and the selectivity loss can be completely removed with very low down-pressure (3 psi) in a very short polishing time (30 s). This indicates that the novel process is very promising for ULSI multilevel interconnection application. The removal rate selectivities of W to thermal oxide, PECVD-TEOS, and BPSG were found to be 47:1, 30:1 and 15:1, respectively, while the selectivities of W to the barrier metals of TiW, Ti and Ta were determined to be 0.6:1, 6:1 and 28:1, respectively. (C) 1997 Elsevier Science S.A.
Thermal stability of selective chemical vapor deposited tungsten contact and effects of in situ N-2 plasma treatment
(1998-07-01)
Wang, MT
;
Wang, PC
;
Chuang, MC
;
Chen, LJ
;
Chen, MC
This work investigates the thermal stability of Al/W/p(+)-n junction diodes, in which the W contact was filled using selective chemical vapor deposition to a thickness of about 450 nm and served as diffusion barrier between the Al and the Si substrate. The effects of in situ N-2 plasma treatment on the barrier effectiveness were also investigated. The Al/W(450 nm)/p(+)-n junction diodes can sustain a 30 min furnace annealing up to 575 degrees C. With an in situ N-2 plasma treatment on the W surface caused a thin layer of WNx to form on the W surface, and the nitrified layer of WNx/W acting as barrier between the AZ and the Si substrate effectively suppressed WAl12 formation at elevated temperatures, resulting in a significant barrier improvement. N2 plasma treatment at 100 W for 300 s enabled the Al/WNx/W(450 nm)lp(+)-n junction diodes to sustain thermal annealing at temperatures up to 625 degrees C without degradation of electrical characteristics. (C) 1998 American Vacuum Society.
Characterization of multilayered Ti/TiN films grown by chemical vapor deposition
(1998-11-02)
Hu, JC
;
Chang, TC
;
Chen, LJ
;
Yang, YL
;
Chang, CY
The resistivity of multilayered Ti/TiN films grown by chemical vapor deposition can be reduced from 240 mu Omega cm (standard sample) to 120 mu Omega cm with NH3 plasma post-treatment for 300 s. Increasing the number of multilayered Ti/TiN mu ms of reduced thickness and a plasma post-treatment technique contributed to reducing the resistivity of TiN films effectively. Smooth multilayered Ti/TiN films were observed by XTEM image. The content of chlorine in the multilayered Ti/TiN film was 1.6 at.%. Therefore, corrosion in the subsequent Al film should be minimized. SIMS depth profiles of the multilayered Ti/TiN sample showed that Ti atom distribution is fairly uniform. The result is in agreement with the observation of XTEM and the measurement of AES depth profiles. The resistivity of multlayered Ti/TiN films can be further reduced to 75 mu Omega cm with an in situ NH3 plasma post-treatment (500 W) for 300 s followed by RTA at 900 degrees C for 60 s. Therefore, low resistivity (<100 mu Omega cm) and low Cl concentration (<2 at.%) CVD TiN films can be achieved by a combination of forming a multilayered Ti/TiN structure, and using NH3 plasma post-treatment and RTA. (C) 1998 Elsevier Science S.A. All rights reserved.
Barrier capabilities of selective chemical vapor deposited W films and WSiN/WSix/W stacked layers against Cu diffusion
(1999-02-01)
Wang, MT
;
Chen, LJ
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work investigates the barrier capability of W layers as well as WSiN/WSix/W stacked layers against Cu diffusion. The VV layers were selectively chemical vapor deposited (CVD) in contact holes to a thickness of about 450 nm using SiH4 reduction of WF6. We found that the CVD-W layers functioned as effective barriers against Cu diffusion, and the Cu/W(450 nm)/p(+)-n junction diodes were able to sustain a 30 min furnace annealing up to 650 degrees C without causing degradation in electrical characteristics. The use of WSiN/WSix/W stacked layers as diffusion layers further improved the thermal stability of Cu/WSiN/WSix/W(450 nm)p(+)-n junction diodes to at least 700 degrees C. The WSix layers were deposited by CVD to a thickness of 75 nm using SiH4/WF6 chemistry, and the subsequent in situ N-2 plasma treatment produced a very thin layer of WSiN on the WSix surface. This thin WSiN layer was very thermally stable and effective in suppressing Cu diffusion, failure of barrier capability for the W films was presumably due to interdiffusion of Cu and Si along grain boundaries of the W films, and the interdiffusion was probably enhanced by the formation of WSi2, The formation of WS(i)2 consumed the W layer and Si substrate, resulting in a volume change in barrier layer, which, in turn, developed local defects, such as microcracks and stress-induced weak points, and thus provided fast paths for Cu diffusion. (C) 1999 The Electrochemical Socity S0013-4651(98)04-036-1. All rights reserved.
Properties and thermal stability of chemically vapor deposited W-rich WSix thin films
(1999-03-01)
Wang, MT
;
Lin, YC
;
Chuang, MS
;
Chun, MC
;
Chen, LJ
The tungsten-rich (Si/W atomic ratio less than 2.0) chemical vapor deposition (CVD)-WSix layer was found to be an efficient diffusion barrier against Cu diffusion. In this study, the properties and thermal stability of the W-rich WSix films chemically vapor deposited at various deposition temperatures, pressures, and SiH4/WF6 reactant gas flow ratios were investigated. With SiH4/WF6 flow rates of 6/2 seem and a total gas pressure of 12 mTorr, the activation energy of the CVD process was determined to be 3.0 kcal/mole, and the film deposited at 250 degrees C has a Si/W atomic ratio of unity. The WSix, films have a low residual stress, low electrical resistivity, and excellent step coverage. For the WSix layers deposited on Si substrates, the residual stress varies from 7 to 9 X 10(8) dynes/cm(2) depending on the deposition temperature. The resistivity of the WSI, films varies from 200 to 340 mu Omega cm; higher deposition temperatures and SiH4/WF6 flow ratios resulted in higher film resistivities. The as-deposited amorphous WSix layer is thermally stable up to 600 degrees C; however, crystallization of the deposited film takes place at 650 degrees C and WSix was transformed into WSi2 phase when the WSix/Si structure was thermally annealed at temperatures above 650 degrees C. (C) 1999 American Vacuum Society. [S0734-211X(99)03602-1].
Investigation on multilayered chemical vapor deposited Ti TiN films as the diffusion barriers in Cu and Al metallization
(1999-07-01)
Hu, JC
;
Chang, TC
;
Chen, LJ
;
Yang, YL
;
Chen, SY
A novel multilayered chemical vapor deposition (CVD) Ti/TiN structure was found to be a more effective diffusion barrier in Cu metallization than TIN alone. The Ti and TIN films were deposited by plasma enhanced CVD and low pressure CVD, respectively. In order to reduce the concentration of chlorine in the films, NH3 plasma posttreatment was applied to multilayered CVD-Ti/TiN films. The resistivity of the film was reduced from 240 to 120 mu Omega cm using NH3 plasma posttreatment. Cu was electroplated on the multilayered CVD-Ti/TiN films. X-ray diffraction patterns showed a small (002) peak and strong (111) peak from the Cu film. The leakage current was kept low during the device application test indicating the Ti/TiN film possessed an enhanced barrier property over the TiN film alone. (C) 1999 American Vacuum Sotiety. [S0734-2101(99)12004-9].
Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectric
(1999-11-01)
Wu, ZC
;
Wang, CC
;
Wu, RG
;
Liu, YL
;
Chen, PS
This work investigates the integration of very thin sputtered Ta and reactively sputtered TaN barriers with Cu and a low-dielectric-constant (low-K) layer of poly(arylene ether) (PAE-2). It is found that Cu readily penetrates into PAE-2 and degrades its dielectric strength in metal-insulator semiconductor capacitors of Cu/PAE-2/Si structure at temperatures as low as 200 degrees C. Very thin Ta and TaN films of 25 nm thickness sandwiched between Cu and the low-K dielectric served as effective barriers during a 30 min thermal annealing at temperatures up to 400 and 450 degrees C, respectively. We propose a failure mechanism of outgassing induced gaseous stress of PAE-2 under the Ta film to explain its premature barrier degradation. The TaN barrier did not suffer from this gaseous stress problem because of its stronger adhesion to PAE-2 than that of Ta to PAE-2, leading to a better long-term reliability. (C) 1999 The Electrochemical Society. S0013-4651(99)04-046-X. All rights reserved.
Copper electroplating for future ultralarge scale integration interconnection
(2000-03-01)
Gau, WC
;
Chang, TC
;
Lin, YS
;
Hu, JC
;
Chen, LJ
Copper has received considerable attention during the past few years because of its low electrical resistivity, high melting temperature, and high electromigration resistance. Since electrochemical plating has several advantages compared to physical vapor deposition and chemical vapor deposition due to its low cost and low processing temperature, it becomes the most attractive technique for the implementation of Cu metallization. In this article, we report an electroplating scheme for Cu deposition and study aspects of copper electroplating related to chemical additives effected on Cu deposition. A low resistivity Cu him (similar to 2 mu Omega cm) could be obtained when metallic ion concentration is decreased or current density is increased. The detailed correlation between film resistivity, electrolyte concentration, current density, and film morphology is given in this study. In addition, chemical additives in electrolyte solutions also play important roles in copper electroplating. In this report, thiourea and polyethylene glycol, which are usually added in printing circuit board electroplating to influence nucleation, have been used as gap filling promoters to help Cu filling. The results show that addition of thiourea and polyethylene glycol could help in forming smooth Cu film but does not promote Cu filling ability. Hydroxyl amine sulfate, which has both amino and sulfate groups, is proposed for use as a gap filling promoter in helping Cu electroplating. In this work, we demonstrate that Cu could be electroplated into fine trenches (at 0.3 mu m dimension with aspect ratio of 3) when hydroxyl amine sulfate is present and no voids are formed. (C) 2000 American Vacuum Society. [S0734-2101 (00)07602-8].

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