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Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
(1998-12-14)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
(1998-12-14)
Chuang, JC
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
Effects of BF2+ implantation on the oxidation resistance of copper films
(1999-06-01)
Wu, ZC
;
Liu, YL
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work investigates the effects of BF2+ implantation on the oxidation resistance of copper films. The BF2+ ions were implanted into Cu films through a 1000 Angstrom thick screen SiO2 layer. We found that the oxidation resistance of Cu films can be significantly improved by BF2+ implantation at appropriate conditions. In particular, BF2+ implantation at 35 to 40 keV to a dose of 1 - 8 x 10(14) cm(-2) made the Cu films capable of resisting oxidation at temperatures up to 250 degrees C. At these BF2+ implantation energies, boron atoms of peak concentration were projected near the Cu surface; thus the diffusion paths of oxidizing species were efficiently blocked. Implantation at too high energy would result in greater depth of projection, thus a lower concentration of boron at the Cu surface; moreover, it generally leads to increased implantation defects that might serve as diffusion paths for the oxidation species. On the other hand, too high dosage implantation would also have an adverse effect on the capability of oxidation resistance for Cu films owing to the higher density of implantation damage as well as the formation of reactive fluorine compound (CuF2) near the Cu surface. (C) 1999 Elsevier Science S.A. All rights reserved.
Copper chemical vapor deposition films deposited from Cu(1,1,1,5,5,5-hexafluoroacetylacetonate) vinyltrimethylsilane
(1999-08-01)
Lin, PJ
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Copper chemical vapor deposition (Cu CVD) from Cu(hfac)vinyltrimethylsilane was studied using a low pressure chemical vapor deposition (LPCVD) system of a cold-wall vertical reactor. It was found that the resistivity of the chemical vapor deposited Cu films,was dependent on the film's microstructure and impurity content, which in turn. were dependent on the deposition conditions. Using H-2 as the carrier gas, we were able to deposit Cu films of low impurity content at deposition rates as high as 150 Angstrom/min. The lowest resistivity Cu films can be deposited at a temperature of 180 degrees C and a pressure of 300 mTorr.
Passivation of copper films with magnesium doping using recoil ion implantation
(2000-01-10)
Wu, ZC
;
Liu, YL
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This work investigates the effects of Ar+ ion implantation through a multilayer structure of SiO2(100 nm)/Mg(20 nm)/Cu/SiO2/Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5 X 10(15) cm(-2) significantly enhances the oxidation resistance at temperatures up to 375 degrees C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths. (C) 2000 Elsevier Science S.A. All rights reserved.
Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectric
(2001-06-01)
Wu, ZC
;
Chiang, CC
;
Wu, WH
;
Chen, MC
;
Jeng, SM
This letter investigates the leakage mechanism in the Cu damascene structure with methylsilane-doped low-k CVD organosilicate glass (OSG) as the intermetal dielectric (IMD), The leakage between Cu lines was found to be dominated by the Frenkel-Poole (F-P) emission in OSG for the structure using a 50-nm SiC etching stop layer (ESL), In the structure using a 50-nm SiN ESL, the leakage component through SiN also made a considerable contribution to the total leakage in addition to the bulk leakage from trapped electrons in OSG, An appropriate ESL of sufficient thickness is essential to reduce the leakage through the ESL if an ESL is used in the Cu damascene integration scheme.
Chemically vapor deposited Cu films on Ar-plasma-treated TiN substrate
(2002-01-01)
Lin, CL
;
Chen, PS
;
Chen, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Chemically vapor deposited (CVD) Cu films on TiN substrates with and without Ar plasma treatment prior to Cu film deposition and the effects of postdeposition thermal annealing were investigated. Cu films deposited on an Ar-plasma-treated TiN substrate have a number of favorable properties over films deposited on a TiN substrate without the plasma treatment. These include a smoother film surface, regular arrangement of Cu grains, and markedly increased ( 111)-preferred orientation. The postdeposition thermal annealing enhanced the (111)-preferred orientation and decreased the resistivity of the as-deposited Cu films. A combined process including Ar plasma substrate treatment prior to Cu film deposition and postdeposition thermal annealing at an appropriate temperature in N-2 ambient is proposed in order to achieve low-resistivity and highly (111)-oriented Cu film deposition. In this way, Cu films with a resistivity of 1.90muOhm.cm and a Cu(111)/Cu(200) peak ratio of 7.08 were obtained.

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