<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

1998 - 20004

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, MCSubject: search.filters.subject.oxidation

Search Results

Now showing 1 - 4 of 4
  • Thumbnail Image
    Item type:Item,
    Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
    (1998-12-14)
    Chuang, JC
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Formation of Cr-O and Cr-N-O films serving as Cu oxidation resistant layers and their N-2 pre-sintering effect
    (1998-12-14)
    Chuang, JC
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This study investigates the Cu oxidation resistant layers of sputter deposited Cr-O and reactively sputter deposited Cr-N-O of 200 Angstrom thickness. with and without, thermal N-2 pre-sintering treatment. The resistance against Cu oxidation (or the highest annealing temperatures without causing Cu oxidation) of the Cr-O and Cr-N-O covered Cu films were found to be 350 and 500 degrees C, respectively, in an O-2 ambient. The inherent defects in the Cr-O lavers and the nitrogen doping in the Cr-N-O layers were believed to be the principal causes for the distinction of the resistance against Cu oxidation. With Na pre-sintering treatments on the Cr-O or Cr-N-O covered Cu films, the ability of resistance against Cu oxidation was degraded. The higher the N-2 pre-sintering temperature was, the lower the oxidation temperature of Cu became. The N-2 pre-sintering thermal process led to formation of defects on the Cr-O and Cr-N-O layers, resulting in the degradation of the ability of resistance against Cu oxidation. Thus, the application of Cr-O or Cr-N-O as a resistant layer against Cu oxidation should avoid such an excess thermal treatment. (C) 1998 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Effects of BF2+ implantation on the oxidation resistance of copper films
    (1999-06-01)
    Wu, ZC
    ;
    Liu, YL
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This work investigates the effects of BF2+ implantation on the oxidation resistance of copper films. The BF2+ ions were implanted into Cu films through a 1000 Angstrom thick screen SiO2 layer. We found that the oxidation resistance of Cu films can be significantly improved by BF2+ implantation at appropriate conditions. In particular, BF2+ implantation at 35 to 40 keV to a dose of 1 - 8 x 10(14) cm(-2) made the Cu films capable of resisting oxidation at temperatures up to 250 degrees C. At these BF2+ implantation energies, boron atoms of peak concentration were projected near the Cu surface; thus the diffusion paths of oxidizing species were efficiently blocked. Implantation at too high energy would result in greater depth of projection, thus a lower concentration of boron at the Cu surface; moreover, it generally leads to increased implantation defects that might serve as diffusion paths for the oxidation species. On the other hand, too high dosage implantation would also have an adverse effect on the capability of oxidation resistance for Cu films owing to the higher density of implantation damage as well as the formation of reactive fluorine compound (CuF2) near the Cu surface. (C) 1999 Elsevier Science S.A. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Passivation of copper films with magnesium doping using recoil ion implantation
    (2000-01-10)
    Wu, ZC
    ;
    Liu, YL
    ;
    Chen, MC
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    This work investigates the effects of Ar+ ion implantation through a multilayer structure of SiO2(100 nm)/Mg(20 nm)/Cu/SiO2/Si on the oxidation resistance of Cu films. Experimental results indicate that implantation at 130 keV to a dose of 5 X 10(15) cm(-2) significantly enhances the oxidation resistance at temperatures up to 375 degrees C. At this energy, a small number of Mg atoms are knocked out, leading to formation of an impervious MgO barrier layer on the Cu surface, which effectively suppresses the oxidizing diffusion paths. (C) 2000 Elsevier Science S.A. All rights reserved.