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Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambient
(2010-10-01)
Hu, Chih-Wei
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Chiang, Cheng-Neng
;
Lin, Chao-Cheng
In this work, electrical characteristics of the Ge-incorporated Nickel silicide (NiSiGe) nanocrystals memory device formed by the rapidly thermal annealing in N-2 and O-2 ambient have been studied. The trapping layer was deposited by co-sputtering the NiSi2 and Ge, simultaneously. Transmission electron microscope results indicate that the NiSiGe nanocrystals were formed obviously in both the samples. The memory devices show obvious charge-storage ability under capacitance-voltage measurement. However, it is found that the NiSiGe nanocrystals device formed by annealing in N-2 ambient has smaller memory window and better retention characteristics than in O-2 ambient. Then, related material analyses were used to confirm that the oxidized Ge elements affect the charge-storage sites and the electrical performance of the NCs memory. (C) 2010 Elsevier B.V. All rights reserved.
Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications
(2011-09-01)
Huang, Sheng-Yao
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Chang, Ting-Chang
;
Chen, Min-Chen
;
Chen, Shih-Ching
;
Lo, Hung-Ping
This study investigates a sputtered Sm2O3 thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance ratio of about 2.5 orders after 10(4) cycling bias pulses and no degradation for retention characteristics monitored after an endurance test at 85 degrees C. The conduction mechanisms for low and high resistance states are dominated by ohmic behavior and trapcontrolled space charge limited current, respectively. The resistance switching is ascribed to the formation/rupture of conductive filaments. (C) 2011 Elsevier Ltd. All rights reserved.
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
(2013-07-01)
Syu, Yong-En
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Zhang, Rui
;
Chang, Ting-Chang
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Tsai, Tsung-Ming
;
Chang, Kuan-Chang
Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
(2013-04-01)
Chang, Kuan-Chang
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Tsai, Tsung-Ming
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Chang, Ting-Chang
;
Wu, Hsing-Hua
;
Chen, Kai-Huang
To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.
The resistive switching characteristics in TaON films for nonvolatile memory applications
(2013-01-15)
Chen, Min-Chen
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Chang, Ting-Chang
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Chiu, Yi-Chieh
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Chen, Shih-Cheng
;
Huang, Sheng-Yao
In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter-deposited TaON thin film were investigated. The proposed memory device exhibits excellent resistance switching behavior with a high resistance state to low resistance state ratio of 2.5 order, write/erase endurance of about 1.5 order, and long retention time of 10(4) s at 85 degrees C. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but would affect the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related to the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. (c) 2012 Elsevier B.V. All rights reserved.
Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
(2011-11-30)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Wang, Pai-Syuan
Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 degrees C, and separated well at 600 degrees C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 degrees C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 degrees C annealing. The electrical characteristics of data retention in the sample with the 600 degrees C annealing exhibited better performance than the 500 C-annealed sample, a result associated with the better separation and better crystallization of the NC structures. (C) 2011 Elsevier B.V. All rights reserved.
Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
(2011-09-01)
Feng, Li-Wei
;
Chang, Chun-Yen
;
Chang, Ting-Chang
;
Tu, Chun-Hao
;
Wang, Pai-Syuan
Formation and composition analyses of titanium oxinitride nanocrystals (NCs) fabricated via treating a magnetron co-sputtered thin film of titanium and silicon dioxide with a rapid thermal annealing in nitrogen ambient were demonstrated for nonvolatile memory applications. Phase separation characteristics with different annealing conditions were examined by transmission electron microscopy and chemical bonding characteristics were confirmed by X-ray photon emission spectra. It was observed that a blanket layer composed mainly of titanium oxide was still present as annealing temperature was increased to 700 degrees C, associated with the thermodynamically stable phase of titanium oxide. Furthermore, a higher thermal treatment of 900 degrees C induced formation of a well-separated NC structure and caused simultaneously partial nitridation of the titanium oxide, thereby forming titanium oxinitride NCs. A significant capacitance-voltage hysteresis in threshold voltage shift at 1 V was easily achieved under a small sweeping voltage range of + 2 V/-2 V, and a memory window retention of 2.2 V was obtained after 10(7) s by extrapolation under a 1 s initial-program/erase condition of +5 V/-5 V, respectively. (C) 2011 Elsevier B.V. All rights reserved.

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