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Author: search.filters.author.Chen, Min-ChenSubject: search.filters.subject.RRAM

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Now showing 1 - 9 of 9
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    A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory
    (2020-03-15)
    Lin, Chih-Yang
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    Chang, Ting-Chang
    ;
    Pan, Chih-Hung
    ;
    Chen, Min-Chen
    ;
    Xu, You-Lin
    A technique was proposed to concentrate the distribution of set voltages. After a plasma treatment, the stability of the high-resistive state (HRS) increased, and the distribution of set voltages was more concentrated at 0.8 V, with a sufficient HRS/LRS resistive ratio (similar to 100x). In addition, the surface of the TiN electrode became rougher, causing oxygen to enter the TiN electrode and form a TiON layer, which acts as an oxygen reservoir. The reservoir is confirmed and the conduction model is supported by both electrical and material analyses. We propose that the observed improvement is due to the difference in the TiN electrode surface. (C) 2019 Published by Elsevier B.V.
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    Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory
    (2016-04)
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Zhang, Rui
    ;
    Wang, Tong
    DThis letter investigates the double-ended resistive switching characteristics of indium tin oxide (ITO) resistance random access memory (RRAM). Resistive switching can be achieved around both the active TiN electrode and the inert Pt electrode. In addition, complementary resistance switching (CRS) characteristics can be observed without current compliance during dc voltage sweep operations. Electrical measurement data fitting results indicate that the oxygen-rich ITO near top and bottom electrodes works as a double-ended resistive switching layer. Based on the analysis of the current conduction mechanism, we propose a physical model to interpret the CRS behaviors in ITO RRAM devices.
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    Nitrogen Buffering Effect on Oxygen in Indium-Tin-Oxide-Capped Resistive Random Access Memory With NH3 Treatment
    (2015-11-01)
    Chen, Ji
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Pan, Chih-Hung
    In this letter, we demonstrate the differing influences of a nitrogen buffering effect in both the switching layer and the indium-tin-oxide (ITO) electrode layer of resistive random access memory (RRAM) which has undergone an NH3 treatment. The nitrogen buffering effect in the switching layer cannot counteract the electric field force, leading to similar I-V characteristics compared with the ITO/Hf:SiO2/TiN control structure RRAM. The nitrogen in the ITO electrode layer, however, works as an oxygen buffer and makes it easier for the redox reaction to occur, leading to improvements in performance, such as concentrated voltages and better endurance.
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    An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
    (2015-08-01)
    Zhang, Wei
    ;
    Hu, Ying
    ;
    Chang, Ting-Chang
    ;
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    The multilevel capability of solid electrolyte resistive random access memory (RRAM) with a Pt/GeSO/TiN structure was explored for potential use as a synapse device. By varying the cutoff voltage during the dc I-V cycles or the ac pulse programming voltage amplitudes, continuous multilevel conductance states were obtained. The reference Pt/GeO/TiN RRAM was fabricated to certify the multilevel capability and was due to the character of the GeS solid electrolyte. Finally, the property of gradual conductance states was exploited to demonstrate spike-timing-dependent plasticity learning, which suggests device\'s potential for use as an electronic synapse device for neuromorphic systems.
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    Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
    (2015-06-01)
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Zhang, Rui
    ;
    Chen, Kai-Huang
    Supercritical carbon dioxide (SCCO2) fluid technology was applied to indium-tin-oxide (ITO) electrode to improve the resistive switching characteristic of silicon oxide RRAM through hydride oxidation for the first time. We found device power consumption can be effectively reduced so that side effects can be also restricted under device operation. By applying SCCO2 fluid, more oxygen ions will be introduced into the ITO electrode and thus the participation of net oxygen ions in the RRAM redox reaction will increase. Fourier transform spectroscopy and X-ray photoelectron spectroscopy were used to confirm hydride oxidation on ITO electrode. Combined with the current fitting results, we proposed a reaction model to explain the improvement of resistive switching in RRAM by SCCO2 fluids.
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    Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory
    (2015-06-01)
    Zhang, Wei
    ;
    Hu, Ying
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset processes. Using data retention tests, these multistates in the set and reset processes were confirmed to be stable. The conduction mechanism gradually changed during reset process from space charge limited current to Schottky emission. A triple-ion reaction model has been proposed to reveal the chemical reaction properties in the resistive switching process.
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    Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory
    (2014-06-01)
    Zhang, Rui
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Huang, Syuan-Yong
    In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO2) resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.
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    Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment
    (2014-01-01)
    Chang, Kuan-Chang
    ;
    Chen, Jung-Hui
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Huang, Syuan-Yong
    We demonstrated that the supercritical CO2 fluid treatment was a new concept to efficiently reduce the operation current of resistance random access memory. The dangling bonds of tin-doped silicon oxide (Sn:SiOx) thin film were passivated by the hydration-dehydration reaction through supercritical CO2 fluid treatment, which was verified by the XPS and FTIR analyses. The current conduction mechanism of low resistance state in post-treated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction. Furthermore, the current conduction mechanism of high resistance state in the memory device was transferred to Schottky emission from Frenkel-Poole conduction. The phenomena were attributed to the discontinuous metal filament formed by hydration-dehydration reaction in Sn:SiOx thin film through supercritical fluid treatment. Finally, a reaction model was proposed to explain the mechanism of current reduction in Sn:SiOx thin film with supercritical CO2 fluid treatment. Crown Copyright (C) 2013 Published by Elsevier B.V. All rights reserved.
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    Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory
    (2014-02-01)
    Chu, Tian-Jian
    ;
    Tsai, Tsung-Ming
    ;
    Chang, Ting-Chang
    ;
    Chang, Kuan-Chang
    ;
    Zhang, Rui
    In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.