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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chen, Min-ChenSubject: search.filters.subject.resistance random access memory (RRAM)

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Now showing 1 - 5 of 5
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    Impact of electrode thermal conductivity on high resistance state level in HfO2-based RRAM
    (2020-09-23)
    Lin, Shih-Kai
    ;
    Wu, Cheng-Hsien
    ;
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Lien, Chen-Hsin
    This study examines the influence of different electrode thermal conductivity on switching behavior during the reset process. Electrical analysis methods and an analysis of current conduction mechanism indicate that better thermal conductivity in the electrode will require larger input power in order to induce more active oxygen ions to take part in the reset process. More active oxygen ions result in a more oxidized switching layer, and cause the effective switching gap (d(sw)) to become larger in the reset process. The effect of the electrode thermal conductivity and input power are explained by our model and clarified by electrical analysis methods.
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    Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset Process
    (2019-11-01)
    Zheng, Hao-Xuan
    ;
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Su, Yu-Ting
    ;
    Chen, Wen-Chung
    This article explains the difference in the reset processes between single RRAM and 1T1R RRAM structures. In the single RRAM, as the reset voltage increases, the off-state resistance increases. This is a normal RRAM operation. However, in the 1T1R structure, the reset voltage increases while the OFF-state resistance does not increase. This may be caused by either current or voltage being insufficient to switch the RRAM to its higher resistance state. The measurements of real voltage indicate that the insufficient voltage is in fact the main cause. For the 1T1R RRAM structure, if it is to be reset to a higher resistance state, it is best done by increasing the gate voltage to increase the OFF-state resistance. Therefore, we provide a method to reduce the misjudgment in the array, and it would be beneficial for the development of high-density memory.
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    Investigation of the forming process under UV illumination in HfO2-based resistance random access memory with a transparent electrode
    (2020-01-09)
    Huang, Wei-Chen
    ;
    Huang, Shin-Ping
    ;
    Chen, Po-Hsun
    ;
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    Traditionally, metal is used for the top electrode (TE) in HfO2-based resistance random access memory. When transparent indium-tin-oxide (ITO) is used as the TE, different forming processes, including lower forming voltages and higher forming currents, are exhibited. This work investigates the forming process with such a transparent TE under UV illumination. In addition, different TE thicknesses and device cell sizes are also investigated to confirm the results. Finally, a possible conduction model is provided to explain the mechanisms under UV-light illumination for the transparent TE during the forming process.
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    Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
    (2013-05-01)
    Chang, Kuan-Chang
    ;
    Zhang, Rui
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Lou, J. C.
    In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high ON/OFF resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C: SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.
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    Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
    (2012-12-01)
    Tsai, Tsung-Ming
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Chang, Geng-Wei
    ;
    Syu, Yong-En
    In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical CO2 fluid treatment. The dangling bonds of a tin-doped silicon oxide (Sn:SiOx) thin film were cross linked by the hydration-dehydration reaction through supercritical fluid technology. The current conduction mechanism of the LRS in the posttreated Sn:SiOx thin film was transferred to hopping conduction from Ohmic conduction, owing to isolation of metal tin in the Sn:SiOx thin film by hydration-dehydration reaction. The phenomena can be verified by our proposed reaction model, which is speculated by the X-ray photoelectron spectroscopy analyses.