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Author: search.filters.author.Chen, Min-ChenSubject: search.filters.subject.resistive random access memory (RRAM)

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Now showing 1 - 5 of 5
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    Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching Memory
    (2019-06-01)
    Lin, Chun-Chu
    ;
    Chen, Po-Hsun
    ;
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Lin, Chih-Yang
    This paper investigates material modifications induced by cosputtering indium-tin oxide (ITO) with gadolinium (Gd) at two different power levels. In addition, resistance switching (RS) properties were also verified for use as an insulator in resistive random access memory (RRAM). Comparison of scanning electron microscope (SEM) measurements for the two different cosputtering powers indicated significant changes of the ITO surface. Transparency was also verified by an N&K analyzer measurement, with results indicating a constant in transparency induced by the lower power Gd doping, indicating potential for transparent applications. Furthermore, the mole fraction ratio defined by X-ray photoelectron spectroscopy reveals a Gd2O3 peak, a likely reason for the ITO thin film becoming less conductive. This ITO/Gd:ITO/TiN RRAM can exhibit stable and robust RS characteristics at a lower forming voltage. In addition, lower operating voltages, including both SET and RESET voltages, can be obtained. Reliability tests including endurance and retention were carried out to confirm its RS stability. The RS mechanism of this ITO/Gd:ITO/TiN device was also investigated with the current-voltage (I-V) fitting method. Moreover, temperature effects were also applied to verify the high-resistance state (HRS) mechanism. Finally, a conduction model was proposed to clarify the RS characteristics and confirm that the ITO/Gd:ITO/TiN device is appropriate for data storage.
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    Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
    (2018-11-09)
    Yang, Chih-Cheng
    ;
    Chen, Po-Hsun
    ;
    Shih, Chih-Cheng
    ;
    Wang, Ming-Hui
    ;
    Tsai, Tsung-Ming
    In this study, an oxidation treatment technique suitable for the material and electronic device applications proceeding at low temperature (only 80 degrees C) and high pressure (3000 psi) utilizing a carbon dioxide (CO2) supercritical fluid (SCF), also known as scCO(2), which is supplemented with water molecules, is reported. To demonstrate the possible effects on material and devices for the proposed SCF treatment, an amorphous germanium-sulfur (GeS) thin film and a GeS-based resistance random access memory (RRAM) device are prepared. After the SCF treatment, electrical measurements confirm that the GeS-based RRAM device exhibits a lower forming voltage, more stable resistance switching characteristics, and higher concentration distributions of high and low resistance states when compared to the device without SCF treatment. As for the material effects, both chemical and physical properties are examined based on material analyses results. It is concluded that the original amorphous GeS thin film transforms to a polycrystallized GeO film, confirmed by a reaction model for the SCF treatment illustrating possible oxidation and crystallization effects induced by this SCF treatment. This water-enhanced scCO(2) SCF treatment technique, thus, shows its capability as a feasible synthetic method for material modification as well as suitability for device level applications.
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    Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory
    (2016-12)
    Chen, Po-Hsun
    ;
    Chang, Ting-Chang
    ;
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Pan, Chih-Hung
    This paper investigates the characteristics of applying indium-tin oxide (ITO) with and without nitride gas (N-2) as the insulator in resistive random access memory (RRAM). After cosputtering an ITO target with N-2 as the insulator and capping the same ITO material as the top electrode, the device exhibits rectifier and resistance switching characteristics before and after the forming process, respectively. The Schottky diodelike rectifier mechanism was also verified by various temperature measurements. Furthermore, robust resistance switching at a positive forming voltage, smaller than that required during negative bias forming, can be achieved. Both positive and negative forming processes are examined with current fitting results, which show different dominant mechanisms when using positive or negative biases. All these mechanisms have also been verified by temperature effect experiments, which confirmed the dominant conduction mechanisms. This, in combination with the fact that the positive forming voltage itself is smaller than the negative forming voltage, and decreases with device scale down, provides two highly beneficial results. This good performance achieved by using ITO with N-2 suggests significant progress of RRAM and remarkable potential applications.
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    Resistance Switching Characteristics Induced by O-2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
    (2017-01-25)
    Chen, Po-Hsun
    ;
    Chang, Ting-Chang
    ;
    Chang, Kuan-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Pan, Chih-Hung
    In this study, an O-2 inductively coupled plasma (ICP) treatment was developed in order to modify the characteristics of indium tin oxide (ITO) film for use as an insulator in resistive random access memory (RRAM). After the O-2 plasma treatment, the previously conductive ITO film is oxidized and becomes less conductive. In addition, after capping the same ITO material for use as a top electrode, we found that the ITO/ITO (O-2 plasma)/TiN device exhibits very stable and robust resistive switching characteristics. On the contrary, the nontreated ITO film for use as an insulator in the ITO/ ITO/TiN device cannot perform resistance switching behaviors. The material analysis initially investigated the ITO film characteristics with and without O-2 plasma treatment. The surface was less rough after O-2 plasma treatment. However, the molar concentration of each element and measured sheet resistance results for the O-2-plasma-treated ITO film were dramatically modified. Next, electrical measurements were carried out to examine the resistance switching stability under continuous DC and AC operation in this ITO/ITO(O-2 plasma)/TiN device. Reliability tests, including endurance and retention, also proved its capability for use in data storage applications. In addition to these electrical measurements, current fitting method experiments at different temperatures were performed to examine and confirm the resistance switching mechanisms. This easily fabricated device, using a simple material combination, achieves excellent performance by using ITO with an O-2 plasma treatment and can further the abilities of RRAM for use in remarkable potential applications.
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    Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory
    (2016-11)
    Chen, Po-Hsun
    ;
    Chang, Kuan-Chang
    ;
    Chang, Ting-Chang
    ;
    Tsai, Tsung-Ming
    ;
    Pan, Chih-Hung
    In this paper, indium-tin-oxide (ITO) was used to act as both insulator and top electrode in resistive random access memory (RRAM) on identical bottom substrates. This is achieved by cosputtering an ITO target with nitride (N-2) or oxygen (O-2) gas as the insulator; then capping by an ITO electrode, such that both the rectifier and RRAM characteristics can be achieved before and after a forming process, respectively. In contrast, using pure ITO as an insulator does not exhibit RRAM behavior. To verify the rectifier and RRAM characteristics, material analyses and electrical measurements at various temperatures were conducted. Reliability tests including retention and endurance were also applied to verify the resistance switching stability. Finally, the rectifier and RRAM conduction models were proposed to examine the resistance switching behaviors. By applying the ITO material as both electrode and insulator, the resistance switching characteristic with high reliability is thus obtained.