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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, NCSubject: search.filters.subject.deep traps

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    Voltage and frequency dependence of differential capacitance in relaxed In0.2Ga0.8As/GaAs Schottky diodes
    (2000-03-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Wang, JS
    ;
    Wang, PY
    ;
    電子物理學系
    Capacitance dispersion over frequency is investigated for relaxed In0.2Ga0.8As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schottky barrier combined with a high-resistance layer containing traps, a simplified equation for the differential capacitance is derived to explain the capacitance-voltage-frequency relation. It is found that the high-frequency capacitance corresponds to the total thickness of the Schottky depletion and the high-resistance layer, while the low-frequency capacitance at a small reverse voltage is the Schottky depletion capacitance and at a large reverse voltage is the high-frequency capacitance.
  • Thumbnail Image
    Item type:Item,
    Differential capacitance measurements of relaxation-induced defects in InGaAs/GaAs Schottky diodes
    (2001-02-01)
    Chen, JF
    ;
    Chen, NC
    ;
    Wang, JS
    ;
    Chen, YF
    ;
    電子物理學系
    The use of a differential capacitance technique for characterizing the relaxation-induced defect states in Schottky diodes has been studied, Based on a proposed equivalent circuit including the effect of potential drop across the carrier-depletion layer, a simple equation of capacitance at different voltages and frequencies is derived and compared with experimental data obtained from relaxed In0.2Ga0.8As/GaAs samples, It is shown that the carrier-depletion layer will introduce capacitance dispersion over frequency like traps; from it the device's geometric parameters, the resistance of the carrier-depletion lager and the ionization energy of the deep level that gives rise to this resistance can be obtained. The relation between the low-frequency capacitance and reverse voltage can be well explained by the depletion of the free carriers between the Schottky depletion and the carrier-depletion layer The relaxation-induced traps are believed to be at 0.535 and 0.36 eV, respectively, in the GaAs and In0.2Ga0.8As regions.