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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chen, P. C.Subject: search.filters.subject.EOT

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    High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
    (2011-01-01)
    Chen, W. B.
    ;
    Cheng, C. H.
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    Lin, C. W.
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    Chen, P. C.
    ;
    Chin, Albert
    We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.