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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chen, S. C.Subject: search.filters.subject.HfLaON

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    High-temperature stable HfLaON p-MOSFETs with high-work-function Ir3Si gate
    (2007-04-01)
    Wu, C. H.
    ;
    Hung, B. F.
    ;
    Chin, Albert
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    Wang, S. J.
    ;
    Wang, X. P.
    We report a novel 1000 degrees C stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 x 10(-5) A/cm(2) at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm(2)/V center dot s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 degrees C rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.