<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

20061

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, S. C.Subject: search.filters.subject.HfSi

Search Results

Now showing 1 - 1 of 1
  • Thumbnail Image
    Item type:Item,
    HfSiON n-MOSFETs using low-work function HfSi chi gate
    (2006-09-01)
    Wu, C. H.
    ;
    Hung, B. F.
    ;
    Chin, Albert
    ;
    Wang, S. J.
    ;
    Yen, F. Y.
    The authors have developed a novel high-temperature stable HfSix gate for high-kappa HfSiON gate dielectric. After a 1000 degrees C RTA, the HfSix/HfSiON devices showed an effective work function of 4.27 eV and a peak electron mobility of 216 cm(2)/V (.) s at 1.6-nm equivalent oxide thickness, with additional merit of a process compatible with current very large scale integration fabrication lines.