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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, SHSubject: search.filters.subject.PHS

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    A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset application
    (2000-10-15)
    Chang, EY
    ;
    Lee, DH
    ;
    Chen, SH
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    A 1.2 V GaAs power pseudomorphic high electron mobility transistors (PHEMT's) for personal handy phone system (PHS) handset application was developed. The power PHEMT has a dual delta doped AlGaAs/InGaAs/GaAs based structure with compact device layout. The 6.72 mm device exhibits maximum power added efficiency (PAE) of 43.62% at 1.2V drain bias with an output power of 22.18 dBm. Under 1.9 GHz pi /4-shifted quadrature phase shift keying (QPSK) modulated PHS signal, the device shows an adjacent channel leakage power (P-adj) Of -56.86 dBc at 600 kHz apart from the center frequency and a linear efficiency of 41.31%. This is the first report on the 1.2-V operation power PHEMT for PHS handset application so far.
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    Item type:Item,
    Low-voltage-operation high-power-density AlGaAs/InGaAs enhancement-mode pseudomorphic high-electron-mobility transistor for personal handy-phone handset application
    (2002-01-15)
    Chen, SH
    ;
    Chang, L
    ;
    Chang, EY
    ;
    Chang, CY
    ;
    材料科學與工程學系
    A high-power-density enhancement-mode AlGaAs/InGaAs pseudomorphic high-electron-mobility transistor (E-PHEMT) is developed for the Japanese personal handy-phone system (PHS). The E-PHEMT has a total gate width of 3.36 mm with a gate length of 0.5 mum. The E-PHEMT shows a high power density of 247 mW/mm at 3.6 V, 196 mW/mm at 3 V, 152 mW/mm at 2.4 V and 63 mW/mm at 1.2 V, this is the highest power density reported so far for E-PHEMT with similar device size and bias conditions. When the E-PHEMT was qualified by 1.9 GHz pi/4-shifted quadrature phase shift keying (QPSK) modulated signal for PHS at 2,4 V with idle current of 30 mA. the device shows a linear PAE of 35.1% with associated power gain of 15.5 dB at output power of 22.4 dBm. The adjacent channel leakage power (P(adj)) of the de ice is -56.6 dBc at 600 kHz apart from the center frequency. The E-PHEMT meets PHS specifications and demonstrates high power density, excellent power efficiency and linearity at low bias voltage.
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    2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application
    (2001)
    Chen, SH
    ;
    Chang, EY
    ;
    Lin, YC
    ;
    Lee, CS
    ;
    友訊交大聯合研發中心
    Enhacement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5dBm) with a power-added-efficiency (PAE) of 50.54 %. Under 1.9GHz pi/4-shifted quadrature phase shift keying(QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.