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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, SHSubject: search.filters.subject.crosstalk

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Now showing 1 - 3 of 3
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    Crosstalk studies of in-plane switching mode under different pixel- and common-electrode configurations
    (2004-04-01)
    Lin, JS
    ;
    Yang, KH
    ;
    Chen, SH
    ;
    光電工程學系
    ;
    Department of Photonics
    In thin-film-transistor liquid-crystal display (TFT-LCD), particularly pixel-electrode configuration of in-plane switching (IPS) mode, crosstalk caused by capacitive coupling between pixel electrodes and data lines could result in image degradation. We derived the capacitive coupling ratio (CCR) of the IPS cell and analyzed the CCR of three conventional TFT-IPS pixel- and common-electrode structures to quantity the crosstalk properties. The effect of coupling voltage on electro-optics characteristics has been investigated. Our results showed that a common electrode placed adjacent to the data line could shield capacitive coupling between the data line and the pixel electrodes, and reduce CCR from 13% to 2.4% and crosstalk intensity ratio (CIR) from 21.2% to 3.9%. We also report the common-overlapping-pixel structure that not only increases the aperture ratio by 1.28 times but also reduces CCR from 13% to 9.1%.
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    High-transmittance pixel- and common-electrode structures design for in-plane switching mode with low crosstalk
    (2004-07-01)
    Lin, JS
    ;
    Yang, KH
    ;
    Chen, SH
    ;
    光電工程學系
    ;
    Department of Photonics
    The replacement of cathode ray tube (CRT) by thin-film-transistor liquid-crystal display (TFT-LCD) in TV applications requires the implementation of LC modes with wide viewing angles and excellent video display quality. Although the in-plane switching (IPS) mode has been known as an excellent technology for realizing wide viewing angles, it has a low aperture ratio that has been improved by Advanced Super-IPS (AS-IPS). In this paper, we propose a novel electrode structure that not only increases substantially the aperture ratio of the current AS-IPS but also reduces the crosstalk in terms of a capacitive coupling ratio from 1.2% to 0.05%.
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    Optimization on the thickness of organic insulator layer for advanced super-in-plane switching mode thin-film-transistor liquid crystal displays
    (2005-08-01)
    Lin, JS
    ;
    Yang, KH
    ;
    Chen, SH
    ;
    光電工程學系
    ;
    Department of Photonics
    The growth rate of thin-film-transistor liquid crystal display (TFT-LCD) industries is faster than predicted due to the possible replacement of a cathode-ray tube television (CRT-TV) by a liquid crystal display television (LCD-TV). The in-plane switching (IPS) mode has been known as an excellent technology for realizing a wide viewing angle for LCD-TV, but it has the drawback of a low aperture ratio. An advanced super-IPS (AS-IPS) structure with an organic insulator layer was invented to achieve a high aperture ratio with increasing manufacturing cost. In this paper, we proposed a simple method of analyzing the optimum thickness of the organic insulator layer for AS-IPS. We derived the capacitive coupling ratio (CCR) of the IPS cell and analyzed the delay time of the AS-IPS panel to quantify the crosstalk properties. Furthermore, we also analyzed our electrode structure (AS'-IPS), which not only increases substantially the aperture ratio over that of AS-IPS but also reduces the crosstalk using the same optimized thickness of the organic insulator layer.