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Author: search.filters.author.Chen, Shih-ChengSubject: search.filters.subject.Nanocrystals

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Now showing 1 - 5 of 5
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    Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
    (2010-10-01)
    Chen, Shih-Cheng
    ;
    Chang, Ting-Chang
    ;
    Chen, Wei-Ren
    ;
    Lo, Yuan-Chun
    ;
    Wu, Kai-Ting
    In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
    (2010-10-01)
    Chen, Shih-Cheng
    ;
    Chang, Ting-Chang
    ;
    Chen, Wei-Ren
    ;
    Lo, Yuan-Chun
    ;
    Wu, Kai-Ting
    In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved.
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    Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
    (2011-11-30)
    Feng, Li-Wei
    ;
    Chang, Chun-Yen
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Wang, Pai-Syuan
    Chemical and electrical characteristics of Ti-based nanocrystals containing germanium, fabricated by annealing the co-sputtered thin film with titanium silicide and germanium targets, were demonstrated for low temperature applications of nonvolatile memory. Formation and composition characteristics of nanocrystals (NCs) at various annealing temperatures were examined by transmission electron microscopy and X-ray photon-emission spectroscopy, respectively. It was observed that the addition of germanium (Ge) significantly reduces the proposed thermal budget necessary for Ti-based NC formation due to the rise of morphological instability and agglomeration properties during annealing. NC structures formed after annealing at 500 degrees C, and separated well at 600 degrees C annealing. However, it was also observed that significant thermal desorption of Ge atoms occurs at 600 degrees C due to the sublimation of formatted GeO phase and results in a serious decrease of memory window. Therefore, an approach to effectively restrain Ge thermal desorption is proposed by encapsulating the Ti-based trapping layer with a thick silicon oxide layer before 600 degrees C annealing. The electrical characteristics of data retention in the sample with the 600 degrees C annealing exhibited better performance than the 500 C-annealed sample, a result associated with the better separation and better crystallization of the NC structures. (C) 2011 Elsevier B.V. All rights reserved.
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    Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
    (2011-09-01)
    Feng, Li-Wei
    ;
    Chang, Chun-Yen
    ;
    Chang, Ting-Chang
    ;
    Tu, Chun-Hao
    ;
    Wang, Pai-Syuan
    Formation and composition analyses of titanium oxinitride nanocrystals (NCs) fabricated via treating a magnetron co-sputtered thin film of titanium and silicon dioxide with a rapid thermal annealing in nitrogen ambient were demonstrated for nonvolatile memory applications. Phase separation characteristics with different annealing conditions were examined by transmission electron microscopy and chemical bonding characteristics were confirmed by X-ray photon emission spectra. It was observed that a blanket layer composed mainly of titanium oxide was still present as annealing temperature was increased to 700 degrees C, associated with the thermodynamically stable phase of titanium oxide. Furthermore, a higher thermal treatment of 900 degrees C induced formation of a well-separated NC structure and caused simultaneously partial nitridation of the titanium oxide, thereby forming titanium oxinitride NCs. A significant capacitance-voltage hysteresis in threshold voltage shift at 1 V was easily achieved under a small sweeping voltage range of + 2 V/-2 V, and a memory window retention of 2.2 V was obtained after 10(7) s by extrapolation under a 1 s initial-program/erase condition of +5 V/-5 V, respectively. (C) 2011 Elsevier B.V. All rights reserved.
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    Formation and nonvolatile memory characteristics of W nanocrystals by in-situ steam generation oxidation
    (2010-12-30)
    Chen, Shih-Cheng
    ;
    Chang, Ting-Chang
    ;
    Hsieh, Chieh-Ming
    ;
    Li, Hung-Wei
    ;
    Sze, S. M.
    The authors provide the formation and memory effects of W nanocrystals nonvolatile memory in this study. The charge trapping layer of stacked a-Si and WSi(2) was deposited by low pressure chemical vapor deposition (LPCVD) and was oxidized by in-situ steam generation system to form uniform W nanocrystals embedded in SiO(2). Transmission electron microscopy analyses revealed the microstructure in the thin film and X-ray photon-emission spectra indicated the variation of chemical composition under different oxidizing conditions. Electrical measurement analyses showed the different charge storage effects because the different oxidizing conditions influence composition of trapping layer and surrounding oxide quality. Moreover, the data retention and endurance characteristics of the formed W nanocrystal memory devices were compared and studied. The results show that the reliability of the structure with 2% hydrogen and 98% oxygen at 950 degrees C oxidizing condition has the best performance among the samples. (C) 2010 Elsevier B.V. All rights reserved.