<link rel="stylesheet" href="styles.cf390c6bfbe7555f.css">

學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

Filters

2007 - 200912010 - 201322

Settings

🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, Shih-Cheng

Search Results

Now showing 1 - 10 of 23
  • Thumbnail Image
    Item type:Item,
    Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
    (2010-10-01)
    Chen, Shih-Cheng
    ;
    Chang, Ting-Chang
    ;
    Chen, Wei-Ren
    ;
    Lo, Yuan-Chun
    ;
    Wu, Kai-Ting
    In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Reproducible resistance switching of a relatively thin FeOx layer produced by oxidizing the surface of a FePt electrode in a metal-oxide-metal structure
    (2010-12-30)
    Feng, Li-Wei
    ;
    Chang, Yao-Feng
    ;
    Chang, Chun-Yen
    ;
    Chang, Ting-Chang
    ;
    Wang, Shin-Yuan
    In this study, reproducible resistance switching effects were demonstrated on a relatively thin FeOx layer in the TiN/SiO2/FeOx/FePt structure produced by oxidizing the surface of a FePt electrode during a plasma-enhanced tetraethyl orthosilicate oxide deposition process. Characteristics of the non-stoichiometric FeOx transition layer were examined by Auger electron spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy analyses. In addition, characteristics of the forming process as well as the current transport characteristics after forming process in the TiN/SiO2/FeOx/FePt structure were discussed. Moreover, the role of the silicon oxide layer was also experimentally demonstrated to act as an additional supplier of oxygen ions for the switching requirement by biasing high voltage bias conditions. (C) 2010 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices
    (2011-08-29)
    Tsai, Yu-Ting
    ;
    Chang, Ting-Chang
    ;
    Huang, Wei-Li
    ;
    Huang, Chih-Wen
    ;
    Syu, Yong-En
    Dual bipolar resistive switching characteristics were observed in the Pt/DyMn2O5/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn2O5 films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]
  • Thumbnail Image
    Item type:Item,
    Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
    (2010-05-31)
    Feng, Li-Wei
    ;
    Chang, Chun-Yen
    ;
    Chang, Yao-Feng
    ;
    Chang, Ting-Chang
    ;
    Wang, Shin-Yuan
    In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
  • Thumbnail Image
    Item type:Item,
    Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
    (2013-01-01)
    Chen, Min-Chen
    ;
    Chang, Ting-Chang
    ;
    Chiu, Yi-Chieh
    ;
    Chen, Shih-Cheng
    ;
    Huang, Sheng-Yao
    The devices composed of Pt/TaON/TiN reveal bipolar switching behavior that shows excellent resistance ratio of 10(2) with operations over 100 DC cycles. The formation/disruption of conducting filaments by oxygen anions migration near/at the TiN electrode was applied to explain the switching behavior. In comparison with Pt/TaON/TiN device, the Cu/TaON/TiN device exhibits reversed bipolar resistive switching characteristic. The switching mechanism of Cu/TaON/TiN device is regarded as the Cu redox reaction and migration in the TaON film. Furthermore, the setting voltage of the Cu/TaON/TiN device is lower than that of the Pt/TaON/TiN device due to the confined conduction path by Cu filaments.
  • Thumbnail Image
    Item type:Item,
    Nonvolatile memory effect of tungsten nanocrystals under oxygen plasma treatments
    (2010-10-01)
    Chen, Shih-Cheng
    ;
    Chang, Ting-Chang
    ;
    Chen, Wei-Ren
    ;
    Lo, Yuan-Chun
    ;
    Wu, Kai-Ting
    In this work, an oxygen plasma treatment was used to improve the memory effect of nonvolatile W nanocrystal memory, including memory window, retention and endurance. To investigate the role of the oxygen plasma treatment in charge storage characteristics, the X-ray photon-emission spectra (XPS) were performed to analyze the variation of chemical composition for W nanocrystal embedded oxide both with and without the oxygen plasma treatment. In addition, the transmission electron microscopy (TEM) analyses were also used to identify the microstructure in the thin film and the size and density of W nanocrystals. The device with the oxygen plasma treatment shows a significant improvement of charge storage effect, because the oxygen plasma treatment enhanced the quality of silicon oxide surrounding the W nanocrystals. Therefore, the data retention and endurance characteristics were also improved by the passivation. (C) 2010 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Carrier Transport and Multilevel Switching Mechanism for Chromium Oxide Resistive Random-Access Memory
    (2011)
    Chen, Shih-Cheng
    ;
    Chang, Ting-Chang
    ;
    Chen, Shih-Yang
    ;
    Li, Hung-Wei
    ;
    Tsai, Yu-Ting
    This article investigates the carrier transport phenomenon and multilevel switching mechanism of Cr(2)O(3)-based resistive random access memory (RRAM) with Pt/Cr(2)O(3)/TiN structure. Before the forming process, the interfacial Schottky barrier dominates the carrier transport. The barrier heights of Pt/Cr(2)O(3) and Cr(2)O(3)/TiN are 0.7 and 0.96 eV, respectively. After the forming process, RRAM at a low resistance state follows the Ohmic conduction. While RRAM is switched to a high resistance state during the reset process, the Frenkel-Poole emission becomes a dominant conduction mechanism. The multilevel resistance states were achieved by applying corresponding reset voltages to the device for controlling the trap levels of the Cr(2)O(3) layer. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3518710] All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory Devices
    (2011)
    Tsai, Yu-Ting
    ;
    Chang, Ting-Chang
    ;
    Lin, Chao-Cheng
    ;
    Chen, Shih-Cheng
    ;
    Chen, Chi-Wen
    The resistive random access memory has attracted much attention for nonvolatile memory application in recent years. However, there is an issue about variations of switching parameters such as set voltage and conductivity of resistance state in resistive switching memory. The variations may cause not only switching error but also reading error during operation. We investigated the switching performance of binary metal oxide as a resistive switching layer embedded with and without metal nanocrystals. Compared with the conventional memory structure, the memory embedded with metal nanocrystals shows better stability, preferable uniformity for the next generation nonvolatile memory application. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3531843] All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors
    (2013-09-01)
    Chen, Yu-Chun
    ;
    Chang, Ting-Chang
    ;
    Li, Hung-Wei
    ;
    Chung, Wan-Fang
    ;
    Chen, Shih-Cheng
    This study investigates environmentally dependent electrical performance as a function of hysteresis phenomena for amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs). Because ambient gas has a great influence on the electrical characteristics of zinc oxide-based TFTs during electrical measurements, the hysteresis for current-voltage and capacitance-voltage measurements are employed in different ambient gases (ambient air, vacuum, oxygen ambient and moisture ambient) to study this issue. Although the hysteresis phenomenon has been explained by the charge trapping and de-trapping model, in order to obtain stable electrical characteristics it is necessary to clarify the original principal mechanism leading to threshold voltage instability under gate bias operations in different environments. Also, the relationship between de-trapping rate and electrical hysteresis is investigated by prolonging the integration time of the semiconductor parameter analyzer. This study may be of importance in explaining the dynamic relationship between the TFT electrical characteristics and ambient gas, as well as providing a better understanding of the environment-dependent hysteresis phenomenon of the IGZO TFTs. (C) 2012 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Bipolar resistive switching of chromium oxide for resistive random access memory
    (2011-08-01)
    Chen, Shih-Cheng
    ;
    Chang, Ting-Chang
    ;
    Chen, Shih-Yang
    ;
    Chen, Chi-Wen
    ;
    Chen, Shih-Ching
    This study investigates the resistance switching characteristics of Cr(2)O(3)-based resistance random access memory (RRAM) with Pt/Cr(2)O(3)/TiN and Pt/Cr(2)O(3)/Pt structures. Only devices with Pt/Cr(2)O(3)/TiN structure exhibit bipolar switching behavior after the forming process because TiN was able to work as an effective oxygen reservoir but Pt was not. Oxygen migration between Cr(2)O(3) and TiN was observed clearly before and after resistance switching from Auger electron spectroscopy (AES) analysis. Both low resistance state, ON state, and high resistance state, OFF state, of Pt/Cr(2)O(3)/TiN structures are stable and reproducible during a successive resistive switching. The resistance ratio of ON and OFF state is over 10(2), on top of that, the retention properties of both states are very stable after 10(4) s with a voltage of -0.2 V. (C) 2010 Elsevier Ltd. All rights reserved.