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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, VincentSubject: search.filters.subject.retention loss

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    Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect
    (2011-04-01)
    Chou, Y. L.
    ;
    Chung, Y. T.
    ;
    Wang, Tahui
    ;
    Ku, S. H.
    ;
    Zou, N. K.
    Discrete nitride program charge loss in a small-area SONOS Flash memory cell during retention is observed. Our measurement shows that a retention V-t of a programmed SONOS cell exhibits a stepwise evolution with retention time. Individual single-program charge-loss-induced threshold voltage shifts (Delta V-t) are characterized. We find the following: 1) The magnitude of Delta V-t exhibits an exponential distribution, which is believed due to a current-path percolation effect caused by random program charges and substrate dopants, and 2) program-state V-t retention loss has large variations in different cells and P/E cycles due to the percolation effect. We develop a Monte Carlo analysis to take into account the distribution of Delta V-t and a tunneling front model to study the spread of a retention V-t distribution in a SONOS Flash memory.