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Author: search.filters.author.Chen, W. B.Subject: search.filters.subject.EOT

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    Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT
    (2009-07-01)
    Chin, Albert
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    Chang, M. F.
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    Lin, S. H.
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    Chen, W. B.
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    Lee, P. T.
    The unwanted high threshold voltage (V-t) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V-t issue that is due to flat-band voltage (V-fb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V-fb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V-t and good control of V-fb roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,
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    Item type:Item,
    High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
    (2011-01-01)
    Chen, W. B.
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    Cheng, C. H.
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    Lin, C. W.
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    Chen, P. C.
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    Chin, Albert
    We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.