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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chen, W. B.Subject: search.filters.subject.Ge

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Now showing 1 - 5 of 5
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    Gate-First TaN/La2O3/SiO2/Ge n-MOSFETs Using Laser Annealing
    (2010-11-01)
    Chen, W. B.
    ;
    Wu, C. H.
    ;
    Shie, B. S.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    To improve device performance, laser annealing was applied to Ge n-MOSFETs, which gave a low sheet resistance of 68 Omega/sq, a small ideality factor of 1.3, and a large similar to 10(5) forward\reverse current in the source-drain n(+)/p junction. The laser-annealed gate-first TaN/La2O3/SiO2/Ge n-MOSFETs showed a high mobility of 603 cm(2)/Vs and a good mobility of 304 cm(2)/Vs at a 1.9-nm equivalent oxide thickness.
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    Item type:Item,
    High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate Dielectrics
    (2010-12-01)
    Chen, W. B.
    ;
    Cheng, C. H.
    ;
    Chin, Albert
    ;
    光電學院
    ;
    電子工程學系及電子研究所
    This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm(2)/V . s at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 x 10(-10) A/mu m OFF-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 degrees C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-kappa LaAlO3 dielectric without using an interfacial layer. Using a different high-kappa HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.
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    High Performance of Ge nMOSFETs Using SiO2 Interfacial Layer and TiLaO Gate Dielectric
    (2010-01-01)
    Chen, W. B.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    Using a SiO2 interfacial layer and a high-kappa gate TiLaO dielectric, the TaN/TiLaO/SiO2 on Ge/Si nMOSFETs in this study showed a small 1.1-nm capacitance equivalent thickness, a good high field mobility of 201 cm(2)/(V . s) at 0.5 MV/cm, and a very low OFF-state leakage current of 3.5 x 10(-10) A/mu m. The self-aligned and gate-first metal-gate/high-kappa and Ge nMOSFETs were processed using standard ion implantation and 550 degrees C RTA. The proposed devices are fully compatible with current VLSI fabrication methods.
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    High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
    (2011-01-01)
    Chen, W. B.
    ;
    Cheng, C. H.
    ;
    Lin, C. W.
    ;
    Chen, P. C.
    ;
    Chin, Albert
    We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.
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    Item type:Item,
    Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing
    (2011-04-01)
    Chen, W. B.
    ;
    Shie, B. S.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    By applying laser annealing (LA) on both gate dielectrics and source/drain activation, the TaN/ZrO(2)/La(2)O(3)/SiO(2) on Ge n-MOSFETs shows a high gate capacitance density, a small n(+)/p-junction ideality factor of 1.10, a small subthreshold swing (SS) of 106 mV/dec, and a good high-field mobility of 285 or 340 cm(2)/V . s after gate leakage correction at 1 MV/cm, at a small 0.95-nm equivalent oxide thickness (EOT). To the best of our knowledge, this is the first demonstration of significantly high gate capacitance in MOSFETs by LA. This is also the highest 1-MV/cm mobility at the smallest EOT of Ge n-MOSFETs and better than the SiO(2)/Si universal mobility.