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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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Author: search.filters.author.Chen, W. B.Subject: search.filters.subject.LaTiO

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    Low-Threshold-Voltage TaN/Ir/LaTiO p-MOSFETs Incorporating Low-Temperature-Formed Shallow Junctions
    (2009-06-01)
    Lin, S. H.
    ;
    Cheng, C. H.
    ;
    Chen, W. B.
    ;
    Yeh, F. S.
    ;
    Chin, Albert
    We demonstrate a low threshold voltage (V,) of -0.17 V and good hole mobility (54 cm(2)/V (.) s at 0.8 MV/cm) in TaN/Ir/LaTiO p-MOSFETs at an equivalent oxide thickness of only 0.66 nm. This was achieved by using Ni-induced solid-phase diffusion of SiO(2)-covered Ni/Ga which reduced the high-kappa dielectric interfacial reactions. This approach, along with its self-aligned and gate-first process, is compatible with current VLSI technology.
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    Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT
    (2009-09-01)
    Lin, S. H.
    ;
    Cheng, C. H.
    ;
    Chen, W. B.
    ;
    Yeh, F. S.
    ;
    Chin, Albert
    In this letter, we report a low threshold voltage (VI) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only 0.63 run. This was achieved by using Ni-induced solid-phase diffusion of SiO(2)-covered Ni/Sb that reduced the high-kappa dielectric interfacial reactions.