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收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, W. B.Subject: search.filters.subject.erase

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    Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions
    (2008-06-01)
    Yang, H. J.
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    Cheng, C. F.
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    Chen, W. B.
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    Lin, S. H.
    ;
    Yeh, F. S.
    We have studied the nitrogen composition dependence of the characteristics of TaN/HfLaON/Hf(1-x-y)N(x)O(y)/ SiO(2)/Si MONOS memory devices. By increasing the N composition in the Hf(1-x-y)N(x)O(y) trapping layer, both the memory window And high-temperature retention improved. The Hf(0.3)N(0.2)O(0.5) MONOS device displayed good characteristics in terms of its +/-9-V program/erase (P/E) voltage, 100-mu s P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85 degrees C or 1.5 V at 125 degrees C.
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    Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers
    (2008-07-01)
    Lin, S. H.
    ;
    Yang, H. J.
    ;
    Chen, W. B.
    ;
    Yeh, F. S.
    ;
    McAlister, Sean P.
    We have studied the performance of double-quantum-barrier [TaN - Ir(3)Si] - [HfAlO - LaAlO(3)] - Hf(0.3)N(0.2)O(0.5) - [HfAlO - SiO(2)]-Si charge-trapping memory devices. These devices display good characteristics in terms of their +/- 9-V program/erase (P/E) voltage, 100-mu s P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 degrees C. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced-interface trap generation.