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🏛️國立陽明交通大學機構典藏

Author: search.filters.author.Chen, W. B.Subject: search.filters.subject.high-kappa

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Now showing 1 - 4 of 4
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    High-Performance Gate-First Epitaxial Ge n-MOSFETs on Si With LaAlO3 Gate Dielectrics
    (2010-12-01)
    Chen, W. B.
    ;
    Cheng, C. H.
    ;
    Chin, Albert
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    光電學院
    ;
    電子工程學系及電子研究所
    This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm(2)/V . s at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 x 10(-10) A/mu m OFF-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 degrees C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-kappa LaAlO3 dielectric without using an interfacial layer. Using a different high-kappa HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.
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    Higher Gate Capacitance Ge n-MOSFETs Using Laser Annealing
    (2011-04-01)
    Chen, W. B.
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    Shie, B. S.
    ;
    Chin, Albert
    ;
    電子工程學系及電子研究所
    ;
    Department of Electronics Engineering and Institute of Electronics
    By applying laser annealing (LA) on both gate dielectrics and source/drain activation, the TaN/ZrO(2)/La(2)O(3)/SiO(2) on Ge n-MOSFETs shows a high gate capacitance density, a small n(+)/p-junction ideality factor of 1.10, a small subthreshold swing (SS) of 106 mV/dec, and a good high-field mobility of 285 or 340 cm(2)/V . s after gate leakage correction at 1 MV/cm, at a small 0.95-nm equivalent oxide thickness (EOT). To the best of our knowledge, this is the first demonstration of significantly high gate capacitance in MOSFETs by LA. This is also the highest 1-MV/cm mobility at the smallest EOT of Ge n-MOSFETs and better than the SiO(2)/Si universal mobility.
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    Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositions
    (2008-06-01)
    Yang, H. J.
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    Cheng, C. F.
    ;
    Chen, W. B.
    ;
    Lin, S. H.
    ;
    Yeh, F. S.
    We have studied the nitrogen composition dependence of the characteristics of TaN/HfLaON/Hf(1-x-y)N(x)O(y)/ SiO(2)/Si MONOS memory devices. By increasing the N composition in the Hf(1-x-y)N(x)O(y) trapping layer, both the memory window And high-temperature retention improved. The Hf(0.3)N(0.2)O(0.5) MONOS device displayed good characteristics in terms of its +/-9-V program/erase (P/E) voltage, 100-mu s P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85 degrees C or 1.5 V at 125 degrees C.
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    Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers
    (2008-07-01)
    Lin, S. H.
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    Yang, H. J.
    ;
    Chen, W. B.
    ;
    Yeh, F. S.
    ;
    McAlister, Sean P.
    We have studied the performance of double-quantum-barrier [TaN - Ir(3)Si] - [HfAlO - LaAlO(3)] - Hf(0.3)N(0.2)O(0.5) - [HfAlO - SiO(2)]-Si charge-trapping memory devices. These devices display good characteristics in terms of their +/- 9-V program/erase (P/E) voltage, 100-mu s P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 degrees C. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced-interface trap generation.