學術出版;;Publications

Permanent URI for this communityhdl:11536/1

收集所有交通大學研究人員與學生個人或團體所發表之各項學術著作，涵蓋期刊論文、教師專書、學位論文等項。;;Collections of Publications of NCTU Researchers and Students Like Journal Papers and Thesis.

Browse

🏛️國立陽明交通大學機構典藏

Search Results

Now showing 1 - 10 of 43

Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxy
(1997-12-15)
Chen, WK
;
Pan, YC
;
Lin, HC
;
Ou, J
;
Chen, WH
We report the successful growth of an InN film by metalorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375 degrees C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec: which explains the superior crystalline quality of our epitaxial film.
Photoluminescence studies of GaN films of different buffer layer and doping concentration
(1998-02-01)
Shen, CC
;
Shu, CK
;
Lin, HC
;
Ou, J
;
Chen, WK
Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of similar to-4 x 10(-4) eV.K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n(1/3). We also obtained a concentration coefficient of 2.34 x 10(-4) eV.cm and a band gap energy of 3.426 eV in the undoped GaN film.
Photoluminescence studies of GaN films of different buffer layer and doping concentration
(1998-02-01)
Shen, CC
;
Shu, CK
;
Lin, HC
;
Ou, J
;
Chen, WK
Photoluminescence (PL) measurements of GaN films with various buffer thicknesses and Si-doping concentrations have been carried out. PL response of one specific sample was studied for temperature dependence. The results showed that the band gap energy reduction is linearly proportional to the temperature increase with a slope of similar to-4 x 10(-4) eV.K-1 and that the activation energies for donor-bound and acceptor-bound exciton transitions are 15 and 18 meV, respectively. In Si-doped GaN films, the PL data indicated that the reduced gap depends on the third power of carrier concentration as n(1/3). We also obtained a concentration coefficient of 2.34 x 10(-4) eV.cm and a band gap energy of 3.426 eV in the undoped GaN film.
Phonon-plasmon interaction in GaN films studied by Raman scattering
(1998-02-01)
Shen, CC
;
Shu, CK
;
Lin, HC
;
Chen, WK
;
Chen, WH
GaN films of different buffer thicknesses (from 0 to 600 Angstrom) were grown on (0001) sapphire using MOCVD. The epitaxial films show autodoping with carrier concentration ranging from 8 x 10(16) to 5 x 10(17) cm(-3) as determined by Hall measurements. The Raman scattering reveals that the A(1)(LO) mode shifts from 733 to 740 cm(-1) as a result of the phonon-plasmon interaction.
Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxy
(1998-09-01)
Chen, WK
;
Lin, HC
;
Pan, YC
;
Ou, J
;
Shu, CK
We used Raman scattering and X-ray diffraction (XRD) methods to investigate the properties of InN films deposited at temperatures ranging from 325 to 600 degrees C by metalorganic vapor phase epitaxy (MOVPE). Significant line broadening, softening and intensity evolution were observed from films at growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of mixed hexagonal and cubic structures and related dislocation defects. As the growth temperature was further increased, the hexagonal phase tvas found to be dominant in the deposited InN film.
Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy
(1998-11-02)
Lee, MC
;
Lin, HC
;
Pan, YC
;
Shu, CK
;
Ou, J
Thin InN films were deposited on the (0001) sapphire substrate at various temperatures from 325 to 600 degrees C by metalorganic vapor phase epitaxy. We used Raman scattering and x-ray diffraction to investigate the film properties and crystalline structures. Significant line broadening, softening and intensity evolution were observed at the growth temperatures between 375 and 450 degrees C. This can be attributed to the formation of the mixed hexagonal and cubic structures and the related dislocation defects. As the growth temperature is further increased, the hexagonal phase is found to be dominant in the deposited InN film. (C) 1998 American Institute of Physics. [S0003-6951(98)00744-X].
A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaN
(1999-09-01)
Ou, J
;
Pan, YC
;
Lee, WH
;
Shu, CK
;
Lin, HC
A thermodynamic analysis tailored with a high-temperature parameter was performed for metalorganic vapor phase epitaxial (MOVPE) growth of InxGa1-xN alloys. Accordingly, a series of InGaN samples were prepared under various input In flow rates and growth temperatures. Theoretical results indicate that the In solid concentration tends to increase with increasing In flow rate and with decreasing temperature, whereas the metal droplets form more easily on the surface at lower growth temperatures and higher In fluxes, which are in good agreement with our experimental data.
Optical and electrical investigations of isoelectronic In-doped GaN films
(2000)
Shu, CK
;
Lee, WH
;
Pan, YC
;
Chen, CC
;
Lin, HC
The optical and electrical properties of isoelectronic In-doped GaN films grown by metalorganic vapor phase epitaxy (MOVPE) were investigated by X-ray, photoluminescence (PL), Hall and Raman measurements. As a result, adequate In-doping quantity causes not only a reduction of yellow luminescence and unintentional background concentration, but an enhanced mobility and decrease in the widths. The improved crystalline and optical qualities of GaN films may be attributed to the decrease in defects. (C) 2000 Elsevier Science Ltd. All rights reserved.
On-wafer electrooptic probing using rotational deformation modulation
(2000-09-01)
Chen, WH
;
Kuo, WK
;
Huang, SL
;
Huang, YT
;
電子工程學系及電子研究所
On-wafer electrooptic probing of two-dimensional electric-field vector (E-vector) is demonstrated by using one laser beam and one electrooptic prober. This technique utilizes both compressed-stretched deformation and rotational deformation on the index ellipsoid of the electrooptic crystal. Both experiment and simulation were performed to map the E-vector on a circuit hoard, and the measurement error is within 2.2%.
Two-dimensional electric-field vector measurement by a LiTaO3 electro-optic probe tip
(2000-09-20)
Kuo, WK
;
Chen, WH
;
Huang, YT
;
Huang, SL
;
電子工程學系及電子研究所
An electro-optic probe tip that is made from LiTaO crystal to make tangentially two-dimensional electric-field (E-field) vector measurements is presented. We combine a new electro-optic modulation technique and a conventional one to resolve the two E-tield components. The new modulation effect on the optical probing beam is caused by rotation of the principal axis the electro-optic crystal, which is proportional to the E-field. Inasmuch as there is no free charge involved in the axis rotation, rotation modulation of the axis can be as fast as conventional modulation. The principles are carefully derived, and an experimental system constructed, to measure two-dimensional E-field vectors on a test pattern. The results are in good agreement with those obtained with commercial software for electromagnetic simulation. The sensitivities of two tangential E-field components are 76 (mV/cm)/root Hz and 0.8 (V/cm)root Hz, respectively. The root-mean-square error of an E-field directional measurement is 1.5 degrees. (C) 2000 Optical Society of America OCIS codes: 120.5410, 230.2090, 230.4110, 130.6010.

學術出版;;Publications

Browse

Filters

Settings

Sort By

Results per page

🏛️國立陽明交通大學機構典藏

Search Results